Aging behavior and recovery of polarization in Sr0.8Bi2.4Ta2O9 thin films

San-Yuan Chen*, Ving Ching Lee

*此作品的通信作者

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

Ferroelectric thin films of bismuth-containing layered perovskite Sr0.8Bi2.4Ta2O9 (SBT) have been prepared by both metalorganic decomposition (designated as MOD-SET film) and magnetron sputtering (designated as sputtering-SBT film) processes. SBT thin films are well known to exhibit free-fatigue behavior with electrical field cycling. However, it was found that after the SBT films were applied with electrical field display, the polarization reduction with time was observed. The aging rate was related to microstructure, which in turn was dependent on the film processing. The sputtering-SBT films show a slower degradation rate than MOD-SBT films. The suppressed polarization can be near-completely recovered by applying either thermal treatment above 150°C or electric-field cycling. There exists a minimum required thermal energy to restore the polarization. The easy recovery exhibited by SBT films in suppressed polarization reveals that a relatively weak domain pinning may exist between domain wall and electronic defects in SBT. The SBT shows little fatigue behavior during electric field cycling but exhibits an aging phenomenon after applied electric field.

原文English
頁(從 - 到)3050-3055
頁數6
期刊Journal of Applied Physics
87
發行號6
DOIs
出版狀態Published - 15 3月 2000

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