Aggressively Scaled Atomic Layer Deposited Amorphous InZnOxThin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS= 2V)

Yan Kui Liang*, June Yang Zheng, Yu Lon Lin, Wei Li Li, Yu Cheng Lu, Dong Ru Hsieh, Li Chi Peng, Tsung Te Chou, Chi Chung Kei, Chun Chieh Lu, Huai Ying Huang, Yuan-Chieh Tseng, Tien-Sheng Chao, Edward Yi Chang, Chun Hsiung Lin*

*此作品的通信作者

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this work, we reported aggressively scaled amorphous InZnOx (α-IZO) thin film transistor (TFT) in channel length (Lch=8 nm) and thickness (2 nm) as a promising candidate for monolithic three-dimensional (M3D) integrations at back-end-of-line (BEOL). The bottom gate TFT with ultra-short Lch of 8 nm exhibited excellent sub-threshold swings (SS) value of 69 mV/dec, high filed-effect mobility (μFE) of 41 cm2/V-s and on-current density (ION) up to 575 μ A μ m (VDS = 1V, VG|= 2V) with outstanding maximum transconductance (Gm) value of 521 μ S μ m (VDS = 1 V). In particular, the maximum Gm reaches 802 μ S μ m at VDS= 2V and very low drain induce barrier lowering (DIBL) performance of 27.8 mV/V represent the best Gm and DIBL values reported for ternary amorphous oxide-semiconductor based TFTs. Furthermore, the highly stable device characteristics of the TFT was demonstrated with positive gate bias stress (PBS), the threshold voltage shift (Δ Vth) of 26.5

原文English
主出版物標題2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9784863488069
DOIs
出版狀態Published - 2023
事件2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 - Kyoto, Japan
持續時間: 11 6月 202316 6月 2023

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
2023-June
ISSN(列印)0743-1562

Conference

Conference2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
國家/地區Japan
城市Kyoto
期間11/06/2316/06/23

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