Aggressively Scaled Atomic Layer Deposited Amorphous InZnOxThin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS= 2V)

Yan Kui Liang; June Yang Zheng; Yu Lon Lin; Wei Li Li; Yu Cheng Lu; Dong Ru Hsieh; Li Chi Peng; Tsung Te Chou; Chi Chung Kei; Chun Chieh Lu; Huai Ying Huang; Yuan-Chieh Tseng; Tien-Sheng Chao; Edward Yi Chang; Chun Hsiung Lin

doi:10.23919/VLSITechnologyandCir57934.2023.10185343

Aggressively Scaled Atomic Layer Deposited Amorphous InZnO_xThin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High G_m(802 μS/μm at V_DS= 2V)

Yan Kui Liang^*, June Yang Zheng, Yu Lon Lin, Wei Li Li, Yu Cheng Lu, Dong Ru Hsieh, Li Chi Peng, Tsung Te Chou, Chi Chung Kei, Chun Chieh Lu, Huai Ying Huang, Yuan-Chieh Tseng, Tien-Sheng Chao, Edward Yi Chang, Chun Hsiung Lin^*

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

6 引文斯高帕斯（Scopus）

摘要

In this work, we reported aggressively scaled amorphous InZnOx (α-IZO) thin film transistor (TFT) in channel length (Lch=8 nm) and thickness (2 nm) as a promising candidate for monolithic three-dimensional (M3D) integrations at back-end-of-line (BEOL). The bottom gate TFT with ultra-short Lch of 8 nm exhibited excellent sub-threshold swings (SS) value of 69 mV/dec, high filed-effect mobility (μFE) of 41 cm2/V-s and on-current density (ION) up to 575 μ A μ m (VDS = 1V, VG|= 2V) with outstanding maximum transconductance (Gm) value of 521 μ S μ m (VDS = 1 V). In particular, the maximum Gm reaches 802 μ S μ m at VDS= 2V and very low drain induce barrier lowering (DIBL) performance of 27.8 mV/V represent the best Gm and DIBL values reported for ternary amorphous oxide-semiconductor based TFTs. Furthermore, the highly stable device characteristics of the TFT was demonstrated with positive gate bias stress (PBS), the threshold voltage shift (Δ Vth) of 26.5

原文	English
主出版物標題	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9784863488069
DOIs	https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185343
出版狀態	Published - 2023
事件	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 - Kyoto, 日本持續時間: 11 6月 2023 → 16 6月 2023

出版系列

名字	Digest of Technical Papers - Symposium on VLSI Technology
卷	2023-June
ISSN（列印）	0743-1562

Conference

Conference	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
國家/地區	日本
城市	Kyoto
期間	11/06/23 → 16/06/23

存取文件

10.23919/VLSITechnologyandCir57934.2023.10185343

其它文件與鏈接

Link to publication in Scopus

引用此

Liang, Y. K., Zheng, J. Y., Lin, Y. L., Li, W. L., Lu, Y. C., Hsieh, D. R., Peng, L. C., Chou, T. T., Kei, C. C., Lu, C. C., Huang, H. Y., Tseng, Y.-C., Chao, T.-S., Chang, E. Y., & Lin, C. H. (2023). Aggressively Scaled Atomic Layer Deposited Amorphous InZnO_xThin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High G_m(802 μS/μm at V_DS= 2V). 於 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2023-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185343

Liang, Yan Kui ; Zheng, June Yang ; Lin, Yu Lon 等. / Aggressively Scaled Atomic Layer Deposited Amorphous InZnO_xThin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High G_m(802 μS/μm at V_DS= 2V). 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{83868a5c5cda47f8a788e0060aeaa772,

title = "Aggressively Scaled Atomic Layer Deposited Amorphous InZnOxThin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS= 2V)",

abstract = "In this work, we reported aggressively scaled amorphous InZnOx (α-IZO) thin film transistor (TFT) in channel length (Lch=8 nm) and thickness (2 nm) as a promising candidate for monolithic three-dimensional (M3D) integrations at back-end-of-line (BEOL). The bottom gate TFT with ultra-short Lch of 8 nm exhibited excellent sub-threshold swings (SS) value of 69 mV/dec, high filed-effect mobility (μFE) of 41 cm2/V-s and on-current density (ION) up to 575 μ A μ m (VDS = 1V, VG|= 2V) with outstanding maximum transconductance (Gm) value of 521 μ S μ m (VDS = 1 V). In particular, the maximum Gm reaches 802 μ S μ m at VDS= 2V and very low drain induce barrier lowering (DIBL) performance of 27.8 mV/V represent the best Gm and DIBL values reported for ternary amorphous oxide-semiconductor based TFTs. Furthermore, the highly stable device characteristics of the TFT was demonstrated with positive gate bias stress (PBS), the threshold voltage shift (Δ Vth) of 26.5",

author = "Liang, {Yan Kui} and Zheng, {June Yang} and Lin, {Yu Lon} and Li, {Wei Li} and Lu, {Yu Cheng} and Hsieh, {Dong Ru} and Peng, {Li Chi} and Chou, {Tsung Te} and Kei, {Chi Chung} and Lu, {Chun Chieh} and Huang, {Huai Ying} and Yuan-Chieh Tseng and Tien-Sheng Chao and Chang, {Edward Yi} and Lin, {Chun Hsiung}",

note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 ; Conference date: 11-06-2023 Through 16-06-2023",

year = "2023",

doi = "10.23919/VLSITechnologyandCir57934.2023.10185343",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023",

address = "美國",

}

Liang, YK, Zheng, JY, Lin, YL, Li, WL, Lu, YC, Hsieh, DR, Peng, LC, Chou, TT, Kei, CC, Lu, CC, Huang, HY, Tseng, Y-C , Chao, T-S , Chang, EY & Lin, CH 2023, Aggressively Scaled Atomic Layer Deposited Amorphous InZnO_xThin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High G_m(802 μS/μm at V_DS= 2V). 於 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Digest of Technical Papers - Symposium on VLSI Technology, 卷 2023-June, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023, Kyoto, 日本, 11/06/23. https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185343

Aggressively Scaled Atomic Layer Deposited Amorphous InZnO_xThin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High G_m(802 μS/μm at V_DS= 2V). / Liang, Yan Kui; Zheng, June Yang; Lin, Yu Lon 等.
2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2023-June).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Aggressively Scaled Atomic Layer Deposited Amorphous InZnOxThin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS= 2V)

AU - Liang, Yan Kui

AU - Zheng, June Yang

AU - Lin, Yu Lon

AU - Li, Wei Li

AU - Lu, Yu Cheng

AU - Hsieh, Dong Ru

AU - Peng, Li Chi

AU - Chou, Tsung Te

AU - Kei, Chi Chung

AU - Lu, Chun Chieh

AU - Huang, Huai Ying

AU - Tseng, Yuan-Chieh

AU - Chao, Tien-Sheng

AU - Chang, Edward Yi

AU - Lin, Chun Hsiung

PY - 2023

Y1 - 2023

N2 - In this work, we reported aggressively scaled amorphous InZnOx (α-IZO) thin film transistor (TFT) in channel length (Lch=8 nm) and thickness (2 nm) as a promising candidate for monolithic three-dimensional (M3D) integrations at back-end-of-line (BEOL). The bottom gate TFT with ultra-short Lch of 8 nm exhibited excellent sub-threshold swings (SS) value of 69 mV/dec, high filed-effect mobility (μFE) of 41 cm2/V-s and on-current density (ION) up to 575 μ A μ m (VDS = 1V, VG|= 2V) with outstanding maximum transconductance (Gm) value of 521 μ S μ m (VDS = 1 V). In particular, the maximum Gm reaches 802 μ S μ m at VDS= 2V and very low drain induce barrier lowering (DIBL) performance of 27.8 mV/V represent the best Gm and DIBL values reported for ternary amorphous oxide-semiconductor based TFTs. Furthermore, the highly stable device characteristics of the TFT was demonstrated with positive gate bias stress (PBS), the threshold voltage shift (Δ Vth) of 26.5

AB - In this work, we reported aggressively scaled amorphous InZnOx (α-IZO) thin film transistor (TFT) in channel length (Lch=8 nm) and thickness (2 nm) as a promising candidate for monolithic three-dimensional (M3D) integrations at back-end-of-line (BEOL). The bottom gate TFT with ultra-short Lch of 8 nm exhibited excellent sub-threshold swings (SS) value of 69 mV/dec, high filed-effect mobility (μFE) of 41 cm2/V-s and on-current density (ION) up to 575 μ A μ m (VDS = 1V, VG|= 2V) with outstanding maximum transconductance (Gm) value of 521 μ S μ m (VDS = 1 V). In particular, the maximum Gm reaches 802 μ S μ m at VDS= 2V and very low drain induce barrier lowering (DIBL) performance of 27.8 mV/V represent the best Gm and DIBL values reported for ternary amorphous oxide-semiconductor based TFTs. Furthermore, the highly stable device characteristics of the TFT was demonstrated with positive gate bias stress (PBS), the threshold voltage shift (Δ Vth) of 26.5

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DO - 10.23919/VLSITechnologyandCir57934.2023.10185343

M3 - Conference contribution

AN - SCOPUS:85167625226

T3 - Digest of Technical Papers - Symposium on VLSI Technology

BT - 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023

PB - Institute of Electrical and Electronics Engineers Inc.

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Liang YK, Zheng JY, Lin YL, Li WL, Lu YC, Hsieh DR 等. Aggressively Scaled Atomic Layer Deposited Amorphous InZnO_xThin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High G_m(802 μS/μm at V_DS= 2V). 於 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.23919/VLSITechnologyandCir57934.2023.10185343