Aggressive Equivalent Oxide Thickness of 0.7 nm on Si0.8Ge0.2Through HfO2 Dielectric Direct Deposition

Meng Chien Lee, Yi Yang Zhao, Wei Lun Chen, Shin Yuan Wang, Yi Xuan Chen, Guang Li Luo, Chao Hsin Chien*

*此作品的通信作者

研究成果: Article同行評審

摘要

This study demonstrated the ultralow equivalent oxide thickness (EOT) value of 0.72 nm and the high-quality high- κ /Si0.8Ge0.2 interface on p-type Si0.8Ge0.2 with direct deposition of HfO2. The ultrathin interfacial layer (IL) thickness of 0.4 nm was observed in the high-resolution transmission electron microscope (HRTEM) images. The high-quality interface might result from the high- κ /Si0.8Ge0.2 interface mainly consisting of the higher Si oxidation states, verified by X-ray photoelectron spectroscopy (XPS). Thus, this study refutes the necessity of IL formation and paves the way for low-EOT Si0.8Ge0.2 devices.

原文English
頁(從 - 到)1605-1608
頁數4
期刊Ieee Electron Device Letters
43
發行號10
DOIs
出版狀態Published - 1 10月 2022

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