Aggressive Equivalent Oxide Thickness of 0.7 nm on Si0.8Ge0.2Through HfO2 Dielectric Direct Deposition

Meng Chien Lee; Yi Yang Zhao; Wei Lun Chen; Shin Yuan Wang; Yi Xuan Chen; Guang Li Luo; Chao Hsin Chien

doi:10.1109/LED.2022.3203016

Aggressive Equivalent Oxide Thickness of 0.7 nm on Si_0.8Ge_0.2Through HfO₂ Dielectric Direct Deposition

Meng Chien Lee, Yi Yang Zhao, Wei Lun Chen, Shin Yuan Wang, Yi Xuan Chen, Guang Li Luo, Chao Hsin Chien^*

^*此作品的通信作者

智慧半導體奈米系統技術研究中心

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This study demonstrated the ultralow equivalent oxide thickness (EOT) value of 0.72 nm and the high-quality high- κ /Si0.8Ge0.2 interface on p-type Si0.8Ge0.2 with direct deposition of HfO2. The ultrathin interfacial layer (IL) thickness of 0.4 nm was observed in the high-resolution transmission electron microscope (HRTEM) images. The high-quality interface might result from the high- κ /Si0.8Ge0.2 interface mainly consisting of the higher Si oxidation states, verified by X-ray photoelectron spectroscopy (XPS). Thus, this study refutes the necessity of IL formation and paves the way for low-EOT Si0.8Ge0.2 devices.

原文	English
頁（從 - 到）	1605-1608
頁數	4
期刊	Ieee Electron Device Letters
卷	43
發行號	10
DOIs	https://doi.org/10.1109/LED.2022.3203016
出版狀態	Published - 1 10月 2022

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10.1109/LED.2022.3203016

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@article{7a492c2004744e88b0f75bf78ac9a792,

title = "Aggressive Equivalent Oxide Thickness of 0.7 nm on Si0.8Ge0.2Through HfO2 Dielectric Direct Deposition",

abstract = "This study demonstrated the ultralow equivalent oxide thickness (EOT) value of 0.72 nm and the high-quality high- κ /Si0.8Ge0.2 interface on p-type Si0.8Ge0.2 with direct deposition of HfO2. The ultrathin interfacial layer (IL) thickness of 0.4 nm was observed in the high-resolution transmission electron microscope (HRTEM) images. The high-quality interface might result from the high- κ /Si0.8Ge0.2 interface mainly consisting of the higher Si oxidation states, verified by X-ray photoelectron spectroscopy (XPS). Thus, this study refutes the necessity of IL formation and paves the way for low-EOT Si0.8Ge0.2 devices.",

keywords = "Equivalent oxide thickness, high-{\^I}° direct deposition, SiGe0MOSCAPs",

author = "Lee, {Meng Chien} and Zhao, {Yi Yang} and Chen, {Wei Lun} and Wang, {Shin Yuan} and Chen, {Yi Xuan} and Luo, {Guang Li} and Chien, {Chao Hsin}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2022",

month = oct,

day = "1",

doi = "10.1109/LED.2022.3203016",

language = "English",

volume = "43",

pages = "1605--1608",

journal = "Ieee Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Aggressive Equivalent Oxide Thickness of 0.7 nm on Si0.8Ge0.2Through HfO2 Dielectric Direct Deposition

AU - Lee, Meng Chien

AU - Zhao, Yi Yang

AU - Chen, Wei Lun

AU - Wang, Shin Yuan

AU - Chen, Yi Xuan

AU - Luo, Guang Li

AU - Chien, Chao Hsin

PY - 2022/10/1

Y1 - 2022/10/1

N2 - This study demonstrated the ultralow equivalent oxide thickness (EOT) value of 0.72 nm and the high-quality high- κ /Si0.8Ge0.2 interface on p-type Si0.8Ge0.2 with direct deposition of HfO2. The ultrathin interfacial layer (IL) thickness of 0.4 nm was observed in the high-resolution transmission electron microscope (HRTEM) images. The high-quality interface might result from the high- κ /Si0.8Ge0.2 interface mainly consisting of the higher Si oxidation states, verified by X-ray photoelectron spectroscopy (XPS). Thus, this study refutes the necessity of IL formation and paves the way for low-EOT Si0.8Ge0.2 devices.

AB - This study demonstrated the ultralow equivalent oxide thickness (EOT) value of 0.72 nm and the high-quality high- κ /Si0.8Ge0.2 interface on p-type Si0.8Ge0.2 with direct deposition of HfO2. The ultrathin interfacial layer (IL) thickness of 0.4 nm was observed in the high-resolution transmission electron microscope (HRTEM) images. The high-quality interface might result from the high- κ /Si0.8Ge0.2 interface mainly consisting of the higher Si oxidation states, verified by X-ray photoelectron spectroscopy (XPS). Thus, this study refutes the necessity of IL formation and paves the way for low-EOT Si0.8Ge0.2 devices.

KW - Equivalent oxide thickness

KW - high-Î° direct deposition

KW - SiGe0MOSCAPs

UR - http://www.scopus.com/inward/record.url?scp=85137888800&partnerID=8YFLogxK

U2 - 10.1109/LED.2022.3203016

DO - 10.1109/LED.2022.3203016

M3 - Article

AN - SCOPUS:85137888800

SN - 0741-3106

VL - 43

SP - 1605

EP - 1608

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 10

ER -

Aggressive Equivalent Oxide Thickness of 0.7 nm on Si0.8Ge0.2Through HfO2 Dielectric Direct Deposition

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Aggressive Equivalent Oxide Thickness of 0.7 nm on Si_0.8Ge_0.2Through HfO₂ Dielectric Direct Deposition