摘要
The photocurrent, device area, and parasitic capacitance of gap-gate type thin-film transistor (TFT) and photodiode have been compared. With the higher photocurrent, less occupied area, and smaller parasitic capacitance, the gap-type TFT is suitable as photo device in active pixel sensor (APS) to sense low intensity light.
原文 | English |
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頁(從 - 到) | 1346-1349 |
頁數 | 4 |
期刊 | Digest of Technical Papers - SID International Symposium |
卷 | 51 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 2020 |
事件 | 57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online 持續時間: 3 8月 2020 → 7 8月 2020 |