Advantages of active pixel circuit using gap-type tft as the photo device to sense low intensity light

Cheng Che Tu, Sin You Wu, Ya Hsiang Tai

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The photocurrent, device area, and parasitic capacitance of gap-gate type thin-film transistor (TFT) and photodiode have been compared. With the higher photocurrent, less occupied area, and smaller parasitic capacitance, the gap-type TFT is suitable as photo device in active pixel sensor (APS) to sense low intensity light.

原文English
頁(從 - 到)1346-1349
頁數4
期刊Digest of Technical Papers - SID International Symposium
51
發行號1
DOIs
出版狀態Published - 2020
事件57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online
持續時間: 3 8月 20207 8月 2020

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