Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs

Fu He Hsiao; Wen Chien Miao; Tzu Yi Lee; Yi Hua Pai; Yu Ying Hung; Daisuke Iida; Chun Liang Lin; Chi Wai Chow; Gong Ru Lin; Kazuhiro Ohkawa; Hao Chung Kuo; Yu Heng Hong

doi:10.1038/s41598-024-57132-9

Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs

Fu He Hsiao, Wen Chien Miao, Tzu Yi Lee, Yi Hua Pai, Yu Ying Hung, Daisuke Iida, Chun Liang Lin, Chi Wai Chow, Gong Ru Lin, Kazuhiro Ohkawa^*, Hao Chung Kuo^*, Yu Heng Hong^*

^*此作品的通信作者

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This study showcases a method for achieving high-performance yellow and red micro-LEDs through precise control of indium content within quantum wells. By employing a hybrid quantum well structure with our six core technologies, we can accomplish outstanding external quantum efficiency (EQE) and robust stripe bandwidth. The resulting 30 μm × 8 micro-LED arrays exhibit maximum EQE values of 11.56% and 5.47% for yellow and red variants, respectively. Notably, the yellow micro-LED arrays achieve data rates exceeding 1 Gbit/s for non-return-to-zero on–off keying (NRZ-OOK) format and 1.5 Gbit/s for orthogonal frequency-division multiplexing (OFDM) format. These findings underscore the significant potential of long-wavelength InGaN-based micro-LEDs, positioning them as highly promising candidates for both full-color microdisplays and visible light communication applications.

原文	English
文章編號	7018
期刊	Scientific reports
卷	14
發行號	1
DOIs	https://doi.org/10.1038/s41598-024-57132-9
出版狀態	Published - 12月 2024

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10.1038/s41598-024-57132-9

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title = "Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs",

abstract = "This study showcases a method for achieving high-performance yellow and red micro-LEDs through precise control of indium content within quantum wells. By employing a hybrid quantum well structure with our six core technologies, we can accomplish outstanding external quantum efficiency (EQE) and robust stripe bandwidth. The resulting 30 μm × 8 micro-LED arrays exhibit maximum EQE values of 11.56% and 5.47% for yellow and red variants, respectively. Notably, the yellow micro-LED arrays achieve data rates exceeding 1 Gbit/s for non-return-to-zero on–off keying (NRZ-OOK) format and 1.5 Gbit/s for orthogonal frequency-division multiplexing (OFDM) format. These findings underscore the significant potential of long-wavelength InGaN-based micro-LEDs, positioning them as highly promising candidates for both full-color microdisplays and visible light communication applications.",

author = "Hsiao, {Fu He} and Miao, {Wen Chien} and Lee, {Tzu Yi} and Pai, {Yi Hua} and Hung, {Yu Ying} and Daisuke Iida and Lin, {Chun Liang} and Chow, {Chi Wai} and Lin, {Gong Ru} and Kazuhiro Ohkawa and Kuo, {Hao Chung} and Hong, {Yu Heng}",

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doi = "10.1038/s41598-024-57132-9",

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AU - Hsiao, Fu He

AU - Miao, Wen Chien

AU - Lee, Tzu Yi

AU - Pai, Yi Hua

AU - Hung, Yu Ying

AU - Iida, Daisuke

AU - Lin, Chun Liang

AU - Chow, Chi Wai

AU - Lin, Gong Ru

AU - Ohkawa, Kazuhiro

AU - Kuo, Hao Chung

AU - Hong, Yu Heng

PY - 2024/12

Y1 - 2024/12

N2 - This study showcases a method for achieving high-performance yellow and red micro-LEDs through precise control of indium content within quantum wells. By employing a hybrid quantum well structure with our six core technologies, we can accomplish outstanding external quantum efficiency (EQE) and robust stripe bandwidth. The resulting 30 μm × 8 micro-LED arrays exhibit maximum EQE values of 11.56% and 5.47% for yellow and red variants, respectively. Notably, the yellow micro-LED arrays achieve data rates exceeding 1 Gbit/s for non-return-to-zero on–off keying (NRZ-OOK) format and 1.5 Gbit/s for orthogonal frequency-division multiplexing (OFDM) format. These findings underscore the significant potential of long-wavelength InGaN-based micro-LEDs, positioning them as highly promising candidates for both full-color microdisplays and visible light communication applications.

AB - This study showcases a method for achieving high-performance yellow and red micro-LEDs through precise control of indium content within quantum wells. By employing a hybrid quantum well structure with our six core technologies, we can accomplish outstanding external quantum efficiency (EQE) and robust stripe bandwidth. The resulting 30 μm × 8 micro-LED arrays exhibit maximum EQE values of 11.56% and 5.47% for yellow and red variants, respectively. Notably, the yellow micro-LED arrays achieve data rates exceeding 1 Gbit/s for non-return-to-zero on–off keying (NRZ-OOK) format and 1.5 Gbit/s for orthogonal frequency-division multiplexing (OFDM) format. These findings underscore the significant potential of long-wavelength InGaN-based micro-LEDs, positioning them as highly promising candidates for both full-color microdisplays and visible light communication applications.

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Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs

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