@article{4c47b82c9b604e949dfb9178439167cf,
title = "Advancements in single-crystal silicon with elevated-laser-liquid-phase-epitaxy (ELLPE) for monolithic 3D ICs",
abstract = "In this study, we present a low thermal budget elevated-laser-liquid-phase-epitaxy technique designed for the precise fabrication of single-crystal islands (SCIs) intended for use in middle-end-of-line (MEOL) FinFETs. Each of these SCIs features a (100) orientation tended from Si seeding structure and is successfully integrated as channel materials in the MEOL circuit of a monolithic 3D IC (3DIC). This technique effectively mitigates the typical performance disparities associated with poly-Si channel materials in upper tiers, addressing a significant challenge in advanced electronic device fabrication and potentially enhancing the performance and reliability of MEOL FinFETs in monolithic 3DIC.",
keywords = "elevated-laser-liquid-phase-epitaxy technique, laser recrystallization, monolithic 3DIC",
author = "Shih, {Bo Jheng} and Pan, {Yu Ming} and Chung, {Hao Tung} and Lin, {Nein Chih} and Yang, {Chih Chao} and Huang, {Po Tsang} and Cheng, {Huang Chung} and Shen, {Chang Hong} and Shieh, {Jia Min} and Wu, {Wen Fa} and Chen, {Kuan Neng} and Chenming Hu",
note = "Publisher Copyright: {\textcopyright} 2024 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd.",
year = "2024",
month = apr,
day = "1",
doi = "10.35848/1347-4065/ad2fdc",
language = "English",
volume = "63",
journal = "Japanese journal of applied physics",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4",
}