摘要
An advanced imaging technique is demonstrated for fast, non-destructive and high resolution characterizations for nanometer-scale recorded bits on a super-resolution near-field optical disk (super-RENS), For the first time, an array of individual 100 nm recorded marks is imaged and studied by using the conductive-atomic force microscopy (C-AFM) method. Discussions also include comparisons of 300 nm, 200 nm and 100 nm recorded marks on both a super-RENS disk and a commercial DVD disk, and the image results are evidence of the high carrier-to-noise ratio (CNR) value on the super-RENS disk, even though the mark size has been shrunk to less than the diffraction limit.
原文 | English |
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頁(從 - 到) | S115-S118 |
期刊 | Journal of the Korean Physical Society |
卷 | 47 |
發行號 | SUPPL. 1 |
出版狀態 | Published - 8月 2005 |