Advanced electrical imaging of dislocations in Mg-In-codoped GaN films

Keyphrases

• Conductive Atomic Force Microscopy (C-AFM) 33%
• Dislocation 100%
• Dislocation Density 66%
• Electrical Imaging 100%
• Film Surface 33%
• Flow Rate Ratio 33%
• Flow Ratio 33%
• GaN Films 100%
• Light Emission 33%
• Low Pressure 33%
• Metal-organic Chemical Vapor Deposition (MOCVD) 33%
• Scanning Surface Potential Microscopy 33%
• Work Function 33%

Engineering

• Atomic Force Microscopy 50%
• Dislocation Density 100%
• Film Surface 50%
• Flow Rate 50%
• Flow Velocity 50%
• Light Emission 50%
• Metal Organic Chemical Vapor Deposition 50%
• Surface Potential 50%

Material Science

• Atomic Force Microscopy 25%
• Density 50%
• Film 100%
• Metal-Organic Chemical Vapor Deposition 25%
• Surface (Surface Science) 50%