Admittance spectroscopy of the electric properties of 1,4-bis[N-(1- naphthyl)-N′-phenylamino]-4,4′ diamine doped with tungsten oxide

M. T. Hsieh; C. C. Chang; C. A. Hu; Y. T. Huang; S. L. Yang; Jenn-Fang Chen; S. W. Hwang; C. H. Chen

Admittance spectroscopy of the electric properties of 1,4-bis[N-(1- naphthyl)-N′-phenylamino]-4,4′ diamine doped with tungsten oxide

M. T. Hsieh, C. C. Chang, C. A. Hu, Y. T. Huang, S. L. Yang, Jenn-Fang Chen, S. W. Hwang, C. H. Chen

電子物理學系

研究成果 › 同行評審

摘要

We report an efficient p-type doping of NPB layer using WO₃ as a p-dopant. We find that increasing the WO₃ volume percentage can reduce the activation energy of the NPB layer and increase the hole concentration in NPB layer. As a result, the hole-injection can be improved via tunneling through a narrow depletion region due to the increasing band bending which corresponds to the difference of Fermi level position between the ITO and the NPB layer.

原文	English
頁面	1315-1318
頁數	4
出版狀態	Published - 12月 2006
事件	13th International Display Workshops, IDW '06 - Otsu, 日本持續時間: 6 12月 2006 → 6 12月 2006

Conference

Conference	13th International Display Workshops, IDW '06
國家/地區	日本
城市	Otsu
期間	6/12/06 → 6/12/06

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@conference{d3d53f2951104180b262e78e947abed2,

title = "Admittance spectroscopy of the electric properties of 1,4-bis[N-(1- naphthyl)-N′-phenylamino]-4,4′ diamine doped with tungsten oxide",

abstract = "We report an efficient p-type doping of NPB layer using WO3 as a p-dopant. We find that increasing the WO3 volume percentage can reduce the activation energy of the NPB layer and increase the hole concentration in NPB layer. As a result, the hole-injection can be improved via tunneling through a narrow depletion region due to the increasing band bending which corresponds to the difference of Fermi level position between the ITO and the NPB layer.",

author = "Hsieh, {M. T.} and Chang, {C. C.} and Hu, {C. A.} and Huang, {Y. T.} and Yang, {S. L.} and Jenn-Fang Chen and Hwang, {S. W.} and Chen, {C. H.}",

year = "2006",

month = dec,

language = "English",

pages = "1315--1318",

note = "13th International Display Workshops, IDW '06 ; Conference date: 06-12-2006 Through 06-12-2006",

}

TY - CONF

T1 - Admittance spectroscopy of the electric properties of 1,4-bis[N-(1- naphthyl)-N′-phenylamino]-4,4′ diamine doped with tungsten oxide

AU - Hsieh, M. T.

AU - Chang, C. C.

AU - Hu, C. A.

AU - Huang, Y. T.

AU - Yang, S. L.

AU - Chen, Jenn-Fang

AU - Hwang, S. W.

AU - Chen, C. H.

PY - 2006/12

Y1 - 2006/12

N2 - We report an efficient p-type doping of NPB layer using WO3 as a p-dopant. We find that increasing the WO3 volume percentage can reduce the activation energy of the NPB layer and increase the hole concentration in NPB layer. As a result, the hole-injection can be improved via tunneling through a narrow depletion region due to the increasing band bending which corresponds to the difference of Fermi level position between the ITO and the NPB layer.

AB - We report an efficient p-type doping of NPB layer using WO3 as a p-dopant. We find that increasing the WO3 volume percentage can reduce the activation energy of the NPB layer and increase the hole concentration in NPB layer. As a result, the hole-injection can be improved via tunneling through a narrow depletion region due to the increasing band bending which corresponds to the difference of Fermi level position between the ITO and the NPB layer.

UR - http://www.scopus.com/inward/record.url?scp=57649217630&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:57649217630

SP - 1315

EP - 1318

T2 - 13th International Display Workshops, IDW '06

Y2 - 6 December 2006 through 6 December 2006

ER -

Admittance spectroscopy of the electric properties of 1,4-bis[N-(1- naphthyl)-N′-phenylamino]-4,4′ diamine doped with tungsten oxide

摘要

Conference

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