Admittance spectroscopy of the electric properties of 1,4-bis[N-(1- naphthyl)-N′-phenylamino]-4,4′ diamine doped with tungsten oxide

M. T. Hsieh, C. C. Chang, C. A. Hu, Y. T. Huang, S. L. Yang, Jenn-Fang Chen, S. W. Hwang, C. H. Chen

研究成果: Paper同行評審

摘要

We report an efficient p-type doping of NPB layer using WO3 as a p-dopant. We find that increasing the WO3 volume percentage can reduce the activation energy of the NPB layer and increase the hole concentration in NPB layer. As a result, the hole-injection can be improved via tunneling through a narrow depletion region due to the increasing band bending which corresponds to the difference of Fermi level position between the ITO and the NPB layer.

原文English
頁面1315-1318
頁數4
出版狀態Published - 12月 2006
事件13th International Display Workshops, IDW '06 - Otsu, Japan
持續時間: 6 12月 20066 12月 2006

Conference

Conference13th International Display Workshops, IDW '06
國家/地區Japan
城市Otsu
期間6/12/066/12/06

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