Admittance spectroscopy and thermal stimulation current for band-offset characteristics in AlAs/GaAs n+-p structures

Jenn-Fang Chen, Jin Shung Wang, Pai Yong Wang, Nie Chuan Chen, Nian Ching Hsu

研究成果: Article同行評審

摘要

Admittance spectroscopy is used to study a molecular-beam epitaxially grown GaAs n+-p diode with 100-angstrom-thick AlAs immersed in the lightly doped p-region. The measurements clearly show two trapping effects. Upon comparison with the reference sample without the AlAs layer, an equivalent circuit for the studied sample is developed. Based on this circuit, the admittance spectra are calculated and found to be consistent with the experimental spectra. From this result, the trap at Ea = 0.52 eV with a capture cross section 1.6 × 10-14 cm2 is believed to result from the resistance-capacitance time constant effect due to the thermionic emission of holes over the AlAs barrier and the activation energy corresponds to the AlAs/GaAs valence-band offset. The results of the thermal stimulation current further support this conclusion.

原文English
頁(從 - 到)227-230
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
39
發行號1
DOIs
出版狀態Published - 1月 2000

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