Adjusting oxygen vacancy and resistance switching of InWZnO thin films by high-pressure oxidation technique

Kai Jhih Gan, Po Tsun Liu*, Chih Chieh Hsu, Dun Bao Ruan, Simon M. Sze

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this study, the room temperature high-pressure oxidation technique is proposed to exquisitely manipulate the surface morphology and oxygen depth-profile of the tungsten-doped indium zinc oxide (InWZnO) film, and its influence on the switching characteristics is emphasized. Based on the atomic force microscope analysis, the smoother surface morphology of the InWZnO film after the high-pressure oxidation treatment is observed. Moreover, it is observed that the InWZnO film has significantly manipulated the oxygen vacancy depth-profile and improved the chemical properties after high-pressure oxidation treatment, according to the x-ray photoelectron spectroscopy depth profiling results. Compared with the control device, the device with high-pressure oxidation treatment exhibited highly uniform resistance states and set/reset repeatability. Finally, the mechanism of the effect of high-pressure oxidation treatment on the InWZnO film is completely examined according to the in-depth material analysis and physical model discussed.

原文English
文章編號171601
期刊Applied Physics Letters
119
發行號17
DOIs
出版狀態Published - 25 10月 2021

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