Active ESD shunt with transistor feedback to reduce Latchup susceptibility or false triggering

Paul C F Tong; Wensong Chen; Ming-Dou Ker; John Hui; Ping Ping Xu; Patty Z Q Liu

doi:10.1109/ICSICT.2004.1436633

Active ESD shunt with transistor feedback to reduce Latchup susceptibility or false triggering

Paul C F Tong^*, Wensong Chen, Ming-Dou Ker, John Hui, Ping Ping Xu, Patty Z Q Liu

^*此作品的通信作者

研究成果: Paper › 同行評審

1 引文斯高帕斯（Scopus）

摘要

We present an anomalous latchup failure phenomenon related to the large Nwell resistor associated with the generic RC-triggered, MOSFET-based Active Clamp circuit for on-chip ESD protection between VCC and VSS buses. A novel Active Clamp circuit with PMOS feedback technique has been proposed to reduce the IC's susceptibility to Latchup during negative current injection at neighboring I/O pads or false triggering of the RC trigger circuit due to noise on the VCC power line. The effectiveness of this new Active Clamp circuit is confirmed by our experiment and simulation results. Optimisation of the size of the PMOS feedback transistor is also discussed in this paper.

原文	English
頁面	820-823
頁數	4
DOIs	https://doi.org/10.1109/ICSICT.2004.1436633
出版狀態	Published - 10月 2004
事件	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China 持續時間: 18 10月 2004 → 21 10月 2004

Conference

Conference	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
國家/地區	China
城市	Beijing
期間	18/10/04 → 21/10/04

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10.1109/ICSICT.2004.1436633

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Tong, P. C. F., Chen, W., Ker, M.-D., Hui, J., Xu, P. P., & Liu, P. Z. Q. (2004). Active ESD shunt with transistor feedback to reduce Latchup susceptibility or false triggering. 820-823. 論文發表於 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China. https://doi.org/10.1109/ICSICT.2004.1436633

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title = "Active ESD shunt with transistor feedback to reduce Latchup susceptibility or false triggering",

abstract = "We present an anomalous latchup failure phenomenon related to the large Nwell resistor associated with the generic RC-triggered, MOSFET-based Active Clamp circuit for on-chip ESD protection between VCC and VSS buses. A novel Active Clamp circuit with PMOS feedback technique has been proposed to reduce the IC's susceptibility to Latchup during negative current injection at neighboring I/O pads or false triggering of the RC trigger circuit due to noise on the VCC power line. The effectiveness of this new Active Clamp circuit is confirmed by our experiment and simulation results. Optimisation of the size of the PMOS feedback transistor is also discussed in this paper.",

author = "Tong, {Paul C F} and Wensong Chen and Ming-Dou Ker and John Hui and Xu, {Ping Ping} and Liu, {Patty Z Q}",

year = "2004",

month = oct,

doi = "10.1109/ICSICT.2004.1436633",

language = "English",

pages = "820--823",

note = "2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 ; Conference date: 18-10-2004 Through 21-10-2004",

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Tong, PCF, Chen, W, Ker, M-D, Hui, J, Xu, PP & Liu, PZQ 2004, 'Active ESD shunt with transistor feedback to reduce Latchup susceptibility or false triggering', 論文發表於 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China, 18/10/04 - 21/10/04 頁 820-823. https://doi.org/10.1109/ICSICT.2004.1436633

TY - CONF

T1 - Active ESD shunt with transistor feedback to reduce Latchup susceptibility or false triggering

AU - Tong, Paul C F

AU - Chen, Wensong

AU - Ker, Ming-Dou

AU - Hui, John

AU - Xu, Ping Ping

AU - Liu, Patty Z Q

PY - 2004/10

Y1 - 2004/10

N2 - We present an anomalous latchup failure phenomenon related to the large Nwell resistor associated with the generic RC-triggered, MOSFET-based Active Clamp circuit for on-chip ESD protection between VCC and VSS buses. A novel Active Clamp circuit with PMOS feedback technique has been proposed to reduce the IC's susceptibility to Latchup during negative current injection at neighboring I/O pads or false triggering of the RC trigger circuit due to noise on the VCC power line. The effectiveness of this new Active Clamp circuit is confirmed by our experiment and simulation results. Optimisation of the size of the PMOS feedback transistor is also discussed in this paper.

AB - We present an anomalous latchup failure phenomenon related to the large Nwell resistor associated with the generic RC-triggered, MOSFET-based Active Clamp circuit for on-chip ESD protection between VCC and VSS buses. A novel Active Clamp circuit with PMOS feedback technique has been proposed to reduce the IC's susceptibility to Latchup during negative current injection at neighboring I/O pads or false triggering of the RC trigger circuit due to noise on the VCC power line. The effectiveness of this new Active Clamp circuit is confirmed by our experiment and simulation results. Optimisation of the size of the PMOS feedback transistor is also discussed in this paper.

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DO - 10.1109/ICSICT.2004.1436633

M3 - Paper

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EP - 823

T2 - 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004

Y2 - 18 October 2004 through 21 October 2004

ER -

Active ESD shunt with transistor feedback to reduce Latchup susceptibility or false triggering

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