Activation of silicon ion-implanted gallium nitride by furnace annealing

R. D. Dupuis*, C. J. Eiting, P. A. Grudowski, H. Hsia, Z. Tang, D. Becher, Hao-Chung Kuo, G. E. Stillman, M. Feng

*此作品的通信作者

研究成果: Conference article同行評審

17 引文 斯高帕斯(Scopus)

摘要

Ion implantation into III-V nitride materials is an important technology for high-power and high-temperature digital and monolithic microwave integrated circuits. We report the results of the electrical, optical, and surface morphology of Si ion-implanted GaN films using furnace annealing. We demonstrate high sheet-carrier densities for relatively low-dose (natoms = 5×1014 cm-2) Si implants into AlN/GaN/sapphire heteroepitaxial films. The samples that were annealed at 1150 °C in N2 for 5 min exhibited a smooth surface morphology and a sheet electron concentration ns to approximately 9.0×1013 cm-2, corresponding to an estimated 19% electrical activation and a 38% Si donor activation in GaN films grown on sapphire substrates. Variable-temperature Hall-effect measurements indicate a Si donor ionization energy approximately 15 meV.

原文English
頁(從 - 到)319-324
頁數6
期刊Journal of Electronic Materials
28
發行號3
DOIs
出版狀態Published - 3月 1999
事件Proceedings of the 1998 40th Electronic Materials Conference, EMC-98 - Charlottesville, VA, USA
持續時間: 24 6月 199826 6月 1998

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