Activation of p-type GaN in a pure oxygen ambient

Tzu Chi Wen*, Shih Chang Lee, Wei-I Lee, Tsung Yu Chen, Shin Hsiung Chan, Jian Shihn Tsang

*此作品的通信作者

研究成果: Article同行評審

27 引文 斯高帕斯(Scopus)

摘要

In this study, we activated p-type GaN in a pure oxygen ambient by rapid thermal annealing. The sheet resistance of p-type GaN was greatly reduced from > 107 Ω/□ to 7.06 × 104 Ω/□ after annealing in oxygen ambient at 500°C. The photoluminescence intensity of blue emission increased by one order of magnitude compared to the as-grown sample. Moreover, the sheet resistance of p-type GaN annealed in pure oxygen ambient is lower than that of p-type GaN annealed in nitrogen ambient. The carrier concentrations of the samples annealed in oxygen ambient are higher than those annealed in nitrogen ambient. The better activation of p-type GaN in oxygen ambient is due to the higher activity of oxygen than that of nitrogen. Oxygen would remove hydrogen that passivates Mg atoms by forming H2O at a lower temperature.

原文English
頁(從 - 到)L495-L497
期刊Japanese Journal of Applied Physics, Part 2: Letters
40
發行號5 B
DOIs
出版狀態Published - 15 5月 2001

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