Achieving Room-Temperature ppb-Level H2S Detection in a Au-SnO2 Sensor with Low Voltage Enhancement Effect

Moumita Deb, Chia Jung Lu*, Hsiao Wen Zan*

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Although semiconductor metal oxide-based sensors are promising for gas sensing, low-power and room temperature operation (24 ± 1 °C) remains desirable for practical applications particularly considering the request of energy saving or net zero emission. In this study, we demonstrate a Au/SnO2-based ultrasensitive H2S gas sensor with a limit of detection (LOD) of 2 ppb, operating at very low voltages (0.05 to 0.5 V) at room temperature. The Au/SnO2-based sensor showed approximately 7 times higher response (the ratio of change in the current to initial current) of ∼270% and 4 times faster recovery (126 s) compared to the pure SnO2-based sensor when exposed to 500 ppb H2S gas concentration at 0.5 V operating voltage at relative humidity (RH) 17.5 ± 2.5%. The enhancement can be attributed to the catalytic characteristics of AuNPs, increasing the number of adsorbed oxygen species on sensing material surfaces. Additionally, AuNPs aid in forming flower-petal-like Au/SnO2 nanostructures, offering a larger surface area and more active sites for H2S sensing. Moreover, at low voltage (<1 V), the localized dipoles at the Au/SnO2 interface may further enhance the absorption of polar oxygen molecules and hence promote the reaction between H2S and oxygen species. This low-power, ultrasensitive H2S sensor outperforms high-powered alternatives, making it ideal for environmental, food safety, and healthcare applications.

原文English
頁(從 - 到)4568-4577
頁數10
期刊ACS Sensors
9
發行號9
DOIs
出版狀態Published - 27 9月 2024

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