Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiO x capping layer by sputtering and post-annealing

  • Shyh Jer Huang
  • , Cheng Wei Chou*
  • , Yan Kuin Su
  • , Jyun Hao Lin
  • , Hsin-Chieh Yu
  • , De Long Chen
  • , Jian Long Ruan
    • *此作品的通信作者

研究成果: Article › 同行評審

33 引文 斯高帕斯（Scopus）

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Keyphrases

Material Science

Engineering

Earth and Planetary Sciences