Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiO x capping layer by sputtering and post-annealing

Shyh Jer Huang, Cheng Wei Chou*, Yan Kuin Su, Jyun Hao Lin, Hsin-Chieh Yu, De Long Chen, Jian Long Ruan

*此作品的通信作者

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

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Engineering & Materials Science

Chemical Compounds

Physics & Astronomy