Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

M. Watanabe, N. Shigyo, T. Hoshii, K. Furukawa, K. Kakushima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, I. Muneta, H. Wakabayashi, A. Nakajima, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai

    研究成果: Conference contribution同行評審

    摘要

    Silicon trench-gate insulated gate bipolar transistors (IGBTs) were analyzed using technology CAD (TCAD). Excellent agreement was confirmed between the J_{C}^{-}}V_{\text{CE} characteristics obtained by 3D- TCAD simulations and experiments. The carrier lifetime requirement for scaled trench-gate IGBTs was determined by extraction of the on-resistance of the n-base layer derived from the electric potential profile.

    原文English
    主出版物標題2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
    發行者Institute of Electrical and Electronics Engineers Inc.
    ISBN(電子)9781728181769
    DOIs
    出版狀態Published - 8 四月 2021
    事件5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 - Chengdu, China
    持續時間: 8 四月 202111 四月 2021

    出版系列

    名字2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

    Conference

    Conference5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
    國家/地區China
    城市Chengdu
    期間8/04/2111/04/21

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