Accurate Non-Quasistatic MOSFET model for simulation of RF and high speed circuits

Xiaodong Jin; Kanyu Cao; Jia Jiunn Ou; Weidong Liu; Yuhua Cheng; Mishel Matloubian; Chen-Ming Hu

doi:10.1109/VLSIT.2000.852823

Accurate Non-Quasistatic MOSFET model for simulation of RF and high speed circuits

Xiaodong Jin^*, Kanyu Cao, Jia Jiunn Ou, Weidong Liu, Yuhua Cheng, Mishel Matloubian, Chen-Ming Hu

^*此作品的通信作者

國際半導體產業學院

研究成果: Conference article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

An accurate Non-Quasistatic SPICE model based on relaxation time is proposed for ac and transient simulation of high speed and radio frequency (RF) circuits. A method for extracting the relaxation time is also provided. Its dependence on Vgs and Vds and channel length is based on physics and built in the model. Finally the model is verified with both 2D simulation and measurement.

原文	English
頁（從 - 到）	196-197
頁數	2
期刊	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.2000.852823
出版狀態	Published - 2000
事件	2000 Symposium on VLSI Technology - Honolulu, HI, USA 持續時間: 13 6月 2000 → 15 6月 2000

存取文件

10.1109/VLSIT.2000.852823

其它文件與鏈接

Link to publication in Scopus

引用此

@article{a151c3401b534b22b85b7e4ec5796bbd,

title = "Accurate Non-Quasistatic MOSFET model for simulation of RF and high speed circuits",

abstract = "An accurate Non-Quasistatic SPICE model based on relaxation time is proposed for ac and transient simulation of high speed and radio frequency (RF) circuits. A method for extracting the relaxation time is also provided. Its dependence on Vgs and Vds and channel length is based on physics and built in the model. Finally the model is verified with both 2D simulation and measurement.",

author = "Xiaodong Jin and Kanyu Cao and Ou, {Jia Jiunn} and Weidong Liu and Yuhua Cheng and Mishel Matloubian and Chen-Ming Hu",

year = "2000",

doi = "10.1109/VLSIT.2000.852823",

language = "English",

pages = "196--197",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2000 Symposium on VLSI Technology ; Conference date: 13-06-2000 Through 15-06-2000",

}

TY - JOUR

T1 - Accurate Non-Quasistatic MOSFET model for simulation of RF and high speed circuits

AU - Jin, Xiaodong

AU - Cao, Kanyu

AU - Ou, Jia Jiunn

AU - Liu, Weidong

AU - Cheng, Yuhua

AU - Matloubian, Mishel

AU - Hu, Chen-Ming

PY - 2000

Y1 - 2000

N2 - An accurate Non-Quasistatic SPICE model based on relaxation time is proposed for ac and transient simulation of high speed and radio frequency (RF) circuits. A method for extracting the relaxation time is also provided. Its dependence on Vgs and Vds and channel length is based on physics and built in the model. Finally the model is verified with both 2D simulation and measurement.

AB - An accurate Non-Quasistatic SPICE model based on relaxation time is proposed for ac and transient simulation of high speed and radio frequency (RF) circuits. A method for extracting the relaxation time is also provided. Its dependence on Vgs and Vds and channel length is based on physics and built in the model. Finally the model is verified with both 2D simulation and measurement.

UR - http://www.scopus.com/inward/record.url?scp=0033697178&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.2000.852823

DO - 10.1109/VLSIT.2000.852823

M3 - Conference article

AN - SCOPUS:0033697178

SN - 0743-1562

SP - 196

EP - 197

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - 2000 Symposium on VLSI Technology

Y2 - 13 June 2000 through 15 June 2000

ER -

Accurate Non-Quasistatic MOSFET model for simulation of RF and high speed circuits

摘要

存取文件

其它文件與鏈接

指紋

引用此