Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs

  • J. S. Wang*
  • , William P.N. Chen
  • , C. H. Shih
  • , C. Lien
  • , Pin Su
  • , Y. M. Sheu
  • , Donald Y.S. Chao
  • , K. Goto
  • *此作品的通信作者

    研究成果: Conference contribution同行評審

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