Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs
- J. S. Wang*
- , William P.N. Chen
- , C. H. Shih
- , C. Lien
- , Pin Su
- , Y. M. Sheu
- , Donald Y.S. Chao
- , K. Goto
*此作品的通信作者
研究成果: Conference contribution › 同行評審