Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs

J. S. Wang; William P.N. Chen; C. H. Shih; C. Lien; Pin Su; Y. M. Sheu; Donald Y.S. Chao; K. Goto

doi:10.1109/VTSA.2007.378964

Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs

J. S. Wang^*
, William P.N. Chen
, C. H. Shih
, C. Lien
, Pin Su
, Y. M. Sheu
, Donald Y.S. Chao
, K. Goto

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

原文	English
主出版物標題	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers
DOIs	https://doi.org/10.1109/VTSA.2007.378964
出版狀態	Published - 2007
事件	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, 台灣持續時間: 23 4月 2007 → 25 4月 2007

出版系列

名字	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
國家/地區	台灣
城市	Hsinchu
期間	23/04/07 → 25/04/07

存取文件

10.1109/VTSA.2007.378964

其它文件與鏈接

Link to publication in Scopus

引用此

Wang, J. S., Chen, W. P. N., Shih, C. H., Lien, C., Su, P., Sheu, Y. M., Chao, D. Y. S., & Goto, K. (2007). Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs. 於 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers 文章 4239532 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2007.378964

Wang, J. S. ; Chen, William P.N. ; Shih, C. H. 等. / Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs. 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{46e6681d7d4f476fb63e5eda9f2f6d39,

title = "Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs",

author = "Wang, \{J. S.\} and Chen, \{William P.N.\} and Shih, \{C. H.\} and C. Lien and Pin Su and Sheu, \{Y. M.\} and Chao, \{Donald Y.S.\} and K. Goto",

year = "2007",

doi = "10.1109/VTSA.2007.378964",

language = "English",

isbn = "1424405858",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

booktitle = "2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers",

note = "2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA ; Conference date: 23-04-2007 Through 25-04-2007",

}

Wang, JS, Chen, WPN, Shih, CH, Lien, C, Su, P, Sheu, YM, Chao, DYS & Goto, K 2007, Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs. 於 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers., 4239532, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, 台灣, 23/04/07. https://doi.org/10.1109/VTSA.2007.378964

Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs. / Wang, J. S.; Chen, William P.N.; Shih, C. H. 等.
2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. 4239532 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs

AU - Wang, J. S.

AU - Chen, William P.N.

AU - Shih, C. H.

AU - Lien, C.

AU - Su, Pin

AU - Sheu, Y. M.

AU - Chao, Donald Y.S.

AU - Goto, K.

PY - 2007

Y1 - 2007

UR - https://www.scopus.com/pages/publications/34548860630

U2 - 10.1109/VTSA.2007.378964

DO - 10.1109/VTSA.2007.378964

M3 - Conference contribution

AN - SCOPUS:34548860630

SN - 1424405858

SN - 9781424405855

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

BT - 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers

T2 - 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

Y2 - 23 April 2007 through 25 April 2007

ER -

Wang JS, Chen WPN, Shih CH, Lien C, Su P, Sheu YM 等. Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs. 於 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. 4239532. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2007.378964