Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs

J. S. Wang*, William P.N. Chen, C. H. Shih, C. Lien, Pin Su, Y. M. Sheu, Donald Y.S. Chao, K. Goto

*此作品的通信作者

    研究成果: Conference contribution同行評審

    原文English
    主出版物標題2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers
    DOIs
    出版狀態Published - 2007
    事件2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, 台灣
    持續時間: 23 4月 200725 4月 2007

    出版系列

    名字International Symposium on VLSI Technology, Systems, and Applications, Proceedings

    Conference

    Conference2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
    國家/地區台灣
    城市Hsinchu
    期間23/04/0725/04/07

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