Absence of coherence effects of carrier energy and velocity in GaAs+-AlGaAs-GaAs- tunnel structures

Ta-Hui Wang*, J. P. Leburton, K. Hess

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

A Monte Carlo calculation has been performed to investigate the electron-phonon interaction and the possibility of coherent phonon emission in the buffer layer of semiconductor-insulator-semiconductor structures. Spatial coherence is shown to be virtually absent in the voltage range of tunnel-junction experiments where current structures with the period of the phonon energy have been observed. Tiny oscillations are obtained for carrier energy and velocity as a function of the gate voltage. However, the fluctuations are too weak to confirm models based on substantial periodic energy variations due to the emission of optical phonons.

原文English
頁(從 - 到)2906-2908
頁數3
期刊Physical Review B
33
發行號4
DOIs
出版狀態Published - 1 1月 1986

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