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Abnormal positive bias stress instability of In-Ga-Zn-O thin-film transistors with low-temperature Al
2
O
3
gate dielectric
Yu Hong Chang, Ming Jiue Yu, Ruei Ping Lin, Chih Pin Hsu,
Tuo-Hung Hou
*
*
此作品的通信作者
電機工程學系
電子研究所
研究成果
:
Article
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同行評審
68
引文 斯高帕斯(Scopus)
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深入研究「Abnormal positive bias stress instability of In-Ga-Zn-O thin-film transistors with low-temperature Al
2
O
3
gate dielectric」主題。共同形成了獨特的指紋。
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Keyphrases
Low Temperature
100%
Amorphous InGaZnO (a-IGZO)
100%
Thin-film Transistors
100%
Al2O3 Gate Dielectric
100%
Voltage Shift
100%
Bias Instability
100%
Positive Bias Stress
100%
Negative Voltage
50%
Electron Traps
33%
Positive-sequence Voltage
33%
Low-temperature Atomic Layer Deposition
33%
Hydrogen Bonds (H-bonds)
16%
Gate Dielectric
16%
Threshold Voltage Shift
16%
Hydrogen Release
16%
Aluminum Oxide
16%
Breakage
16%
Power Law
16%
Hydrogen Atom
16%
Partial Recovery
16%
Time Dependence
16%
Stretched Exponential Function
16%
Hydrogen Migration
16%
Two-process Model
16%
Electron Doping
16%
Atomic Layer Deposition Al2O3
16%
Positive Bias
16%
Negative Bias Stress
16%
Engineering
Low-Temperature
100%
Gate Dielectric
100%
Thin-Film Transistor
100%
Atomic Layer Deposition
66%
Positive Voltage
66%
Energetics
33%
Breakage
33%
Electron Channel
33%
Exponential Function
33%
Material Science
Thin-Film Transistor
100%
Al2O3
100%
Dielectric Material
100%