TY - JOUR
T1 - Abnormal ESD Failure Mechanism in High-Pin-Count BGA Packaged ICs Due to Stressing Nonconnected Balls
AU - Lo, Wen Yu
AU - Ker, Ming-Dou
PY - 2004/3
Y1 - 2004/3
N2 - An abnormal failure mechanism due to ESD pulse applied on the nonconnected (NC) solder balls of a high-pin-count (683 balls) BGA packaged chipset IC is presented. The ESD test results of the IC product were found below human-body-model (HBM) 2 kV when stressing all balls or only stressing NC balls, but above HBM 3 kV when stressing all balls excluding NC balls. Failure analyses, including scanning electron microscopy (SEM) photographs and the measurement of current waveforms during ESD discharging event, have been performed. With a new proposed equivalent model, a clear explanation on this unusual phenomenon is found to have a high correlation to the small capacitor method (SCM). Several solutions to overcome this failure mechanism are also discussed.
AB - An abnormal failure mechanism due to ESD pulse applied on the nonconnected (NC) solder balls of a high-pin-count (683 balls) BGA packaged chipset IC is presented. The ESD test results of the IC product were found below human-body-model (HBM) 2 kV when stressing all balls or only stressing NC balls, but above HBM 3 kV when stressing all balls excluding NC balls. Failure analyses, including scanning electron microscopy (SEM) photographs and the measurement of current waveforms during ESD discharging event, have been performed. With a new proposed equivalent model, a clear explanation on this unusual phenomenon is found to have a high correlation to the small capacitor method (SCM). Several solutions to overcome this failure mechanism are also discussed.
KW - Ball grid array (BGA)
KW - Charged-device model (CDM)
KW - Electrostatic discharge (ESD)
KW - Scanning electron microscopy (SEM)
KW - Small capacitor method (SCM)
UR - http://www.scopus.com/inward/record.url?scp=2342530365&partnerID=8YFLogxK
U2 - 10.1109/TDMR.2004.824362
DO - 10.1109/TDMR.2004.824362
M3 - Article
AN - SCOPUS:2342530365
SN - 1530-4388
VL - 4
SP - 24
EP - 31
JO - IEEE Transactions on Device and Materials Reliability
JF - IEEE Transactions on Device and Materials Reliability
IS - 1
ER -