Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress

Hsiang Pin Hung; Ming-Dou Ker; Shih Hung Chen; Che Hao Chuang

doi:10.1109/IPFA.2006.251021

Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress

Hsiang Pin Hung^*, Ming-Dou Ker, Shih Hung Chen, Che Hao Chuang

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

6 引文斯高帕斯（Scopus）

摘要

Complex ESD failure mechanisms have been found in the interface circuits of an IC product with multiple separated power domains. The MM ESD robustness can not achieve 150 V in this IC product with separated power domains, although it has the 2-kV HBM ESD robustness. The ND-mode MM ESD currents were discharged by circuitous current paths through interface circuits to cause the gate oxide damage, junction filament, and contact destroy of the internal transistors. The detailed discharging paths of each ND-mode ESD failure were analysed in this paper.

原文	English
主出版物標題	Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
頁面	163-166
頁數	4
DOIs	https://doi.org/10.1109/IPFA.2006.251021
出版狀態	Published - 1 12月 2006
事件	13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 - Singapore, Singapore 持續時間: 3 7月 2006 → 7 7月 2006

出版系列

名字	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
國家/地區	Singapore
城市	Singapore
期間	3/07/06 → 7/07/06

存取文件

10.1109/IPFA.2006.251021

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Link to publication in Scopus

引用此

Hung, H. P., Ker, M.-D., Chen, S. H., & Chuang, C. H. (2006). Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress. 於 Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 (頁 163-166). 文章 4017046 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2006.251021

Hung, Hsiang Pin ; Ker, Ming-Dou ; Chen, Shih Hung 等. / Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress. Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. 頁 163-166 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{cd5735f6ef7b459f83f1a2af02dcfa07,

title = "Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress",

abstract = "Complex ESD failure mechanisms have been found in the interface circuits of an IC product with multiple separated power domains. The MM ESD robustness can not achieve 150 V in this IC product with separated power domains, although it has the 2-kV HBM ESD robustness. The ND-mode MM ESD currents were discharged by circuitous current paths through interface circuits to cause the gate oxide damage, junction filament, and contact destroy of the internal transistors. The detailed discharging paths of each ND-mode ESD failure were analysed in this paper.",

author = "Hung, {Hsiang Pin} and Ming-Dou Ker and Chen, {Shih Hung} and Chuang, {Che Hao}",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/IPFA.2006.251021",

language = "English",

isbn = "1424402069",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

pages = "163--166",

booktitle = "Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006",

note = "13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 ; Conference date: 03-07-2006 Through 07-07-2006",

}

Hung, HP, Ker, M-D, Chen, SH & Chuang, CH 2006, Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress. 於 Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006., 4017046, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 頁 163-166, 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006, Singapore, Singapore, 3/07/06. https://doi.org/10.1109/IPFA.2006.251021

Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress. / Hung, Hsiang Pin; Ker, Ming-Dou; Chen, Shih Hung 等.
Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. p. 163-166 4017046 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress

AU - Hung, Hsiang Pin

AU - Ker, Ming-Dou

AU - Chen, Shih Hung

AU - Chuang, Che Hao

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Complex ESD failure mechanisms have been found in the interface circuits of an IC product with multiple separated power domains. The MM ESD robustness can not achieve 150 V in this IC product with separated power domains, although it has the 2-kV HBM ESD robustness. The ND-mode MM ESD currents were discharged by circuitous current paths through interface circuits to cause the gate oxide damage, junction filament, and contact destroy of the internal transistors. The detailed discharging paths of each ND-mode ESD failure were analysed in this paper.

AB - Complex ESD failure mechanisms have been found in the interface circuits of an IC product with multiple separated power domains. The MM ESD robustness can not achieve 150 V in this IC product with separated power domains, although it has the 2-kV HBM ESD robustness. The ND-mode MM ESD currents were discharged by circuitous current paths through interface circuits to cause the gate oxide damage, junction filament, and contact destroy of the internal transistors. The detailed discharging paths of each ND-mode ESD failure were analysed in this paper.

UR - http://www.scopus.com/inward/record.url?scp=34250663154&partnerID=8YFLogxK

U2 - 10.1109/IPFA.2006.251021

DO - 10.1109/IPFA.2006.251021

M3 - Conference contribution

AN - SCOPUS:34250663154

SN - 1424402069

SN - 9781424402069

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

SP - 163

EP - 166

BT - Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006

T2 - 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006

Y2 - 3 July 2006 through 7 July 2006

ER -

Hung HP, Ker MD, Chen SH, Chuang CH. Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress. 於 Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. p. 163-166. 4017046. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2006.251021

Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress

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