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Ab initio chemical kinetics for the reaction of an H atom with Si
3
H
8
D. H. Varma
, P. Raghunath
,
Ming-Chang Lin
應用化學系
研究成果
:
Article
›
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17
引文 斯高帕斯（Scopus）
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3
H
8
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Keyphrases
Chemical Kinetics
100%
H Atoms
100%
CCSD(T)
100%
Si-H Bonds
100%
Plasma-enhanced Chemical Vapor Deposition (PECVD)
50%
Branching Ratio
50%
Silane
50%
Constant Ratio
50%
A-Si
50%
B3LYP
50%
Temperature Zones
50%
Heat of Formation
50%
Product Channel
50%
Wide Temperature Range
50%
Chemical Vapor Deposition Processes
50%
H-abstraction
50%
Group by
50%
Transition State Theory
50%
Tunneling Correction
50%
Si2H6
50%
Theoretical Method
50%
SiH3
50%
RCC2
50%
Hydrogen Substitution
50%
Primary Si
50%
Chemistry
CCSD
100%
Hydrogen
33%
Rate Constant
33%
DFT-B3LYP Calculation
33%
Enthalpy of Formation
33%
Plasma Enhanced Chemical Vapor Deposition
33%
Transition State Theory
33%
Vapor Deposition Process
33%
formation
33%
Physics
Hydrogen Bond
100%
Reaction Kinetics
100%
Vapor Deposition
50%
Heat of Formation
50%
Blood Plasma
50%
Material Science
Film
100%
Plasma-Enhanced Chemical Vapor Deposition
100%
Vapor Phase Deposition
100%
Chemical Engineering
Plasma Enhanced Chemical Vapor Deposition
100%
Film
100%