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Ab initio chemical kinetics for SiH
3
reactions with Si
x
H
2x+2
(x = 1-4)
P. Raghunath,
Ming-Chang Lin
應用化學系
研究成果
:
Article
›
同行評審
9
引文 斯高帕斯(Scopus)
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深入研究「Ab initio chemical kinetics for SiH
3
reactions with Si
x
H
2x+2
(x = 1-4)」主題。共同形成了獨特的指紋。
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Keyphrases
Silane
100%
Chemical Kinetics
100%
SiH3
100%
H-abstraction
75%
Low Energy
50%
A-Si
50%
Si2H6
50%
Chemical Vapor Deposition
25%
Temperature Range
25%
Potential Energy Surface
25%
Reaction Barrier
25%
B3LYP
25%
Density Functional Theory
25%
Heat of Formation
25%
Substitution Reaction
25%
Ab Initio Molecular Orbital
25%
CCSD(T)
25%
Film Growth
25%
Product Channel
25%
Alkanes
25%
Thin Film Deposition
25%
Energy Pathways
25%
Low Barrier
25%
Transition State Theory
25%
Tunneling Correction
25%
Transition State Theory Calculations
25%
Molecular Transitions
25%
Geometric Parameters
25%
Low Energy Barrier
25%
Energy Product
25%
Gas-phase Kinetics
25%
Gas-phase Mechanisms
25%
Chemistry
Transition State Theory
100%
Chemical Vapor Deposition
50%
Potential Energy Surface
50%
Molecular Orbital
50%
Rate Constant
50%
DFT-B3LYP Calculation
50%
Enthalpy of Formation
50%
Substitution Reaction
50%
Density Functional Theory
50%
CCSD
50%
Energy Barrier
50%
formation
50%
Alkane
50%