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Ab initio chemical kinetics for reactions of H atoms with SiH
x
(x = 1-3) radicals and related unimolecular decomposition processes
Putikam Raghunath, Yun Min Lee, Shang Ying Wu,
Jong-Shinn Wu
,
Ming-Chang Lin
*
*
此作品的通信作者
機械工程學系
應用化學系
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同行評審
19
引文 斯高帕斯(Scopus)
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Keyphrases
Silane
100%
Chemical Kinetics
100%
H Atoms
100%
Unimolecular Decomposition
100%
Decomposition Process
100%
Chemical Vapor Deposition
50%
Energy Conservation
50%
A-Si
50%
Hydrogenated Amorphous Silicon
50%
Heat of Formation
50%
Thermal Decomposition
50%
Ab Initio Molecular Orbital
50%
Rice-Ramsperger-Kassel-Marcus
50%
Marcus Theory
50%
Si Solar Cell
50%
Isodesmic Reactions
50%
Chemical Vapor Deposition Processes
50%
Coupled Cluster
50%
Master Equation
50%
Enthalpy of Formation
50%
Hydrogen Atom
50%
Transition State Theory
50%
Tunneling Correction
50%
Heat of Reaction
50%
Variational
50%
SiH3
50%
Industrial Chemicals
50%
Extrapolation Method
50%
Computational Data
50%
H2 Elimination
50%
Solar Cell Fabrication
50%
Unimolecular Reaction
50%
Association Energy
50%
P-T Conditions
50%
Intrinsic Barriers
50%
Basis Set Extrapolation
50%
Material Conservation
50%
Chemistry
Enthalpy of Formation
100%
Chemical Vapor Deposition
50%
Pyrolysis
50%
Molecular Orbital
50%
Rate Constant
50%
Coupled Cluster
50%
Master Equation
50%
Methane
50%
Hydrogen Atom
50%
Transition State Theory
50%
Heat of Reaction
50%
Vapor Deposition Process
50%
Unimolecular Reaction
50%
Industrial Substance
50%
Solar Cell
50%
Amorphous Silicon
50%