@inproceedings{6d56de08a49543aaa85123178d7054b6,
title = "A World First QLC RRAM: Highly Reliable Resistive-Gate Flash with Record 108Endurance and Excellent Retention",
abstract = "In this paper, we demonstrated successfully a quad-level cell (QLC) of a resistive-gate memory. It was implemented in a 1k bits chip with integration of FinFET core on a mature logic platform. Comprehensive reliabilities have been examined. The results show the forming-free property, low programming current (< μ A), high endurance and excellent data retention. A record high 5×108 endurance can be achieved. Furthermore, a 4-bit-per-cell (16 levels) has been demonstrated successfully. The chip-level performance is also analyzed, showing well disturbance-immune during SET/RESET, READ, which kept healthy signal-to-noise margin, 2-3x. This architecture is a strong candidate for the next generation resistance memory.",
keywords = "FinFET, Quad-level Cell (QLC), RG-Flash, RRAM, Reliability, Resistance memory",
author = "Li, {M. Y.} and Lee, {J. P.} and Liu, {C. H.} and Guo, {J. C.} and Chung, {Steve S.}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 61st IEEE International Reliability Physics Symposium, IRPS 2023 ; Conference date: 26-03-2023 Through 30-03-2023",
year = "2023",
doi = "10.1109/IRPS48203.2023.10117748",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings",
address = "United States",
}