A W-Band 1-dB Insertion Loss Wilkinson Power Divider Using Silicon-Based Integrated Passive Device

Chiao Yun Hsiao, Chung Tse Michael Wu, Chien Nan Kuo*

*此作品的通信作者

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

This work presents an on-chip Wilkinson power divider using silicon-based integrated passive device (IPD) technology that operates from 70 to 110 GHz, thereby covering the entire W-band (75-110 GHz). Based on a simple impedance transformation different from the conventional Wilkinson power divider topology, the proposed silicon IPD power divider with a core size of 0.417 mm2 can demonstrate power loss of less than 1.1 dB along with input-output return loss better than 14 dB throughout the entire band.

原文English
文章編號9380427
頁(從 - 到)654-657
頁數4
期刊IEEE Microwave and Wireless Components Letters
31
發行號6
DOIs
出版狀態Published - 6月 2021

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