摘要
This work presents an on-chip Wilkinson power divider using silicon-based integrated passive device (IPD) technology that operates from 70 to 110 GHz, thereby covering the entire W-band (75-110 GHz). Based on a simple impedance transformation different from the conventional Wilkinson power divider topology, the proposed silicon IPD power divider with a core size of 0.417 mm2 can demonstrate power loss of less than 1.1 dB along with input-output return loss better than 14 dB throughout the entire band.
原文 | English |
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文章編號 | 9380427 |
頁(從 - 到) | 654-657 |
頁數 | 4 |
期刊 | IEEE Microwave and Wireless Components Letters |
卷 | 31 |
發行號 | 6 |
DOIs | |
出版狀態 | Published - 6月 2021 |