A volatile RRAM synapse for neuromorphic computing

E. Covi*, D. Ielmini, Y. H. Lin, W. Wang, T. Stecconi, V. Milo, A. Bricalli, E. Ambrosi, G. Pedretti, T. Y. Tseng

*此作品的通信作者

研究成果: Conference contribution同行評審

11 引文 斯高帕斯(Scopus)

摘要

Neuromorphic computing has emerged as a promising approach for autonomous systems able to learn, adapt, and interact in real time with the environment. To build neuromorphic hardware, the recent development of novel material-based devices such as resistive switching memory (RRAM) has shown to be crucial since this class of devices offers the unique advantage to implement neuron and synaptic functions in silico by device physics, thus avoiding bulky circuits and very complex algorithms. In this work, we first explore volatile switching behaviour of RRAM devices, investigating their ability to capture short-term plasticity (STP) and short-term memory (STM) functionalities. Then, we characterise a volatile RRAM synapse, discussing its potential use in a spiking neural network for speech recognition applications.

原文English
主出版物標題2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019
發行者Institute of Electrical and Electronics Engineers Inc.
頁面903-906
頁數4
ISBN(電子)9781728109961
DOIs
出版狀態Published - 11月 2019
事件26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019 - Genoa, Italy
持續時間: 27 11月 201929 11月 2019

出版系列

名字2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019

Conference

Conference26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019
國家/地區Italy
城市Genoa
期間27/11/1929/11/19

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