A V-band MMIC SPDT passive HEMT switch using impedance transformation networks

Yu-Jiu Wang*, Kun You Lin, Dow Chih Niu, Huei Wang

*此作品的通信作者

研究成果: Conference article同行評審

7 引文 斯高帕斯(Scopus)

摘要

A V-Band MMIC single pole double throw (SPDT) switch using GaAs PHEMT process is designed, fabricated and tested. In contrast to the conventional resonant-type switch design method, this passive FET switch circuit utilizes impedance transformation to compensate the drain-source capacitance effect for the off-state in millimeter-wave frequency range. This SPDT switch has a measured isolation better than 30 dB for the off-state and 4 dB insertion loss for the on-state from 53 GHz to 61 GHz. The isolation performance of this design approach outmatches previously published FET switches in this frequency range.

原文English
頁(從 - 到)253-256
頁數4
期刊IEEE MTT-S International Microwave Symposium Digest
3
DOIs
出版狀態Published - 2001
事件International Microwave Symposium Digest IEEE-MTT-S 2001 - Phoenix, AZ, United States
持續時間: 20 5月 200125 5月 2001

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