摘要
A unique approach for fabricating poly-Si thin-film transistors (TFTs) with self-aligned T-shaped gate (T-gate) structure is reported. A counter-doped poly-Si process comprises an in-situ doped n+ poly-Si deposition followed by a subsequentshallow implantation of BF 2+. Both high etching isotropy in n+ poly-Si and high etching selectivity between n+ poly-Si and B-doped poly-Si in a Cl2-based plasma process are the key enablers for the fabrication of our T-gate structures. Thanks to good control in the shape and deformation of our T-gate structure, sidewall air-gap spacers in combination with self-aligned Ni silicided gate and source/drain were established. High-performance sub-micron poly-Si TFTs are evidenced by superior transfer characteristics measured on TFTs with effective gate length of 0.15μ m. The unique T-gate structure provides an effective way for possible production of poly-Si radio-frequency TFTs viable for emerging new applications.
原文 | English |
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文章編號 | 8977479 |
頁(從 - 到) | 397-400 |
頁數 | 4 |
期刊 | IEEE Electron Device Letters |
卷 | 41 |
發行號 | 3 |
DOIs | |
出版狀態 | Published - 3月 2020 |