A Unified Statistical Analysis of Comprehensive Fluctuations of Gate-All-Around Silicon Nanosheet MOSFETs Induced by RDF, ITF, and WKF Simultaneously

Sekhar Reddy Kola, Yiming Li*, Chieh Yang Chen, Min Hui Chuang

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

We for the first time investigate comprehensive electrical characteristic fluctuation of gate-all-around silicon nanosheet metal-oxide-semiconductor field-effect transistors. The comprehensive fluctuation signifies the work function fluctuation, interface trap fluctuation, and random dopant fluctuation, simultaneously. Due to a complicated interaction of surface potential among fluctuation sources, simply considering each fluctuation source and calculating their total fluctuation will result in overestimated results, compared with the result of comprehensive fluctuation. 10.8% and 48.8% overestimations are observed for the threshold voltage and off-state current fluctuations. Notably, the characteristic fluctuation of the explored device is dominated by work function fluctuation because the channel surface potential is strongly altered by randomly localized work functions.

原文English
主出版物標題Proceedings of the 23rd International Symposium on Quality Electronic Design, ISQED 2022
發行者IEEE Computer Society
ISBN(電子)9781665494663
DOIs
出版狀態Published - 2022
事件23rd International Symposium on Quality Electronic Design, ISQED 2022 - Santa Jose, United States
持續時間: 6 4月 20227 4月 2022

出版系列

名字Proceedings - International Symposium on Quality Electronic Design, ISQED
2022-April
ISSN(列印)1948-3287
ISSN(電子)1948-3295

Conference

Conference23rd International Symposium on Quality Electronic Design, ISQED 2022
國家/地區United States
城市Santa Jose
期間6/04/227/04/22

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