A tunable and program-erasable capacitor on Si with excellent tuning memory

C. H. Lai*, C. F. Lee, Albert Chin, C. Zhu, M. F. Li, S. P. McAlister, D. L. Kwong

*此作品的通信作者

    研究成果: Paper同行評審

    6 引文 斯高帕斯(Scopus)

    摘要

    A novel tunable and program-erasable high-κ AIN MIS capacitor is demonstrated for the first time with excellent tuning memory, which is useful to tune the impedance mismatching and resonance frequency without always connected voltage bias circuit. Large C max/C min tunability of 12 is obtained due to the high-κ AIN dielectric with high 5 πF/πm 2 capacitance density. Good tuning memory is evidenced from the small V th variation after program or erase at +4 V or -4 V for 10,000 s and the potential of years long extrapolated memory time.

    原文English
    頁面259-262
    頁數4
    DOIs
    出版狀態Published - 6月 2004
    事件Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, United States
    持續時間: 6 6月 20048 6月 2004

    Conference

    ConferenceDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
    國家/地區United States
    城市Fort Worth, TX
    期間6/06/048/06/04

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