A three-terminal band-trap-band tunneling model for drain engineering and substrate bias effect on GIDL in MOSFET

Jyh-Chyurn Guo*, Yuan Chang Liu, M. H. Chou, M. T. Wang, F. Shone

*此作品的通信作者

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22 引文 斯高帕斯(Scopus)

摘要

A new three-terminal partial band-trap-band tunneling (BTB) model is proposed to predict the drain engineering effect and substrate bias effect on gate-induced-drain-leakage (GIDL) characteristics for virgin devices free from electric stress. The lateral field EL and the ratio of lateral field w.r.t. total field e (EL IE) are two key factors responsible for the tunneling barrier lowering and the enhancement of GIDL. The principle to suppress GIDL are two-fold: the first one is to eliminate process induced intrinsic interface states and the second one is to minimize EL and EL l E by using drain engineering or changing bias conditions such as applying forward substrate biases.

原文English
頁(從 - 到)1518-1523
頁數6
期刊IEEE Transactions on Electron Devices
45
發行號7
DOIs
出版狀態Published - 1 12月 1998

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