A theoretical analysis of millimeter-wave GaAs/AlGaAs multiquantum well transit time devices by the lucky drift model

Multiquantum well structures are potentially bettern than bulk materials in millimeter-wave avalanche transit time oscillator applications. They are potentially superior because multiquantum well structures can increase the nonlinearity of the avalanche process in high electric fields. In this paper, we incorporate the multiquantum well ionization rates described by a lucky drift model into a modified Read type large signal simulation. The simulations show that 13% efficiency at 100 GHz and 9% efficiency at 150 GHz can be achieved with properly designed GaAs/AlGaAs multiquantum well avalanche transit time devices. These results are comparable to the state of the art experimental results in Si IMPATT devices.