A temperature accelerated model for high state retention loss of nitride storage flash memory

M. Y. Lee; N. K. Zous; Trista Huang; W. J. Tsai; Albert Kuo; Ta-Hui Wang; Shaw Yin; Chih Yuan Lu

doi:10.1109/IRWS.2004.1422728

A temperature accelerated model for high state retention loss of nitride storage flash memory

M. Y. Lee^*, N. K. Zous, Trista Huang, W. J. Tsai, Albert Kuo, Ta-Hui Wang, Shaw Yin, Chih Yuan Lu

^*此作品的通信作者

研究成果 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A temperate accelerating model, which bases on the tunneling out of the thermally emitted electrons in the nitride layer via traps at the bottom oxide, is proposed to explain the retention loss behavior of high VT states at MXVAND products with respect to bake temperature, bake time, and cycling numbers. The model parameters can be easily extracted and the fitting results show an acceptable accuracy. According to this model, the retention loss should follow a straight line on a semi-log scale and the slope is proportional to the temperature. Besides, the cycling number dependence is successfully reproduced by considering the erase degradation and the growth rate of oxide traps.

原文	English
頁面	11-14
頁數	4
DOIs	https://doi.org/10.1109/IRWS.2004.1422728
出版狀態	Published - 10月 2004
事件	2004 IEEE International Integrated Reliability Workshop Final Report - S. Lake Tahoe, CA, 美國持續時間: 18 10月 2004 → 21 10月 2004

Conference

Conference	2004 IEEE International Integrated Reliability Workshop Final Report
國家/地區	美國
城市	S. Lake Tahoe, CA
期間	18/10/04 → 21/10/04

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10.1109/IRWS.2004.1422728

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@conference{c5db03266892424885fef0026d9d7e7c,

title = "A temperature accelerated model for high state retention loss of nitride storage flash memory",

abstract = "A temperate accelerating model, which bases on the tunneling out of the thermally emitted electrons in the nitride layer via traps at the bottom oxide, is proposed to explain the retention loss behavior of high VT states at MXVAND products with respect to bake temperature, bake time, and cycling numbers. The model parameters can be easily extracted and the fitting results show an acceptable accuracy. According to this model, the retention loss should follow a straight line on a semi-log scale and the slope is proportional to the temperature. Besides, the cycling number dependence is successfully reproduced by considering the erase degradation and the growth rate of oxide traps.",

author = "Lee, {M. Y.} and Zous, {N. K.} and Trista Huang and Tsai, {W. J.} and Albert Kuo and Ta-Hui Wang and Shaw Yin and Lu, {Chih Yuan}",

year = "2004",

month = oct,

doi = "10.1109/IRWS.2004.1422728",

language = "English",

pages = "11--14",

note = "2004 IEEE International Integrated Reliability Workshop Final Report ; Conference date: 18-10-2004 Through 21-10-2004",

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TY - CONF

T1 - A temperature accelerated model for high state retention loss of nitride storage flash memory

AU - Lee, M. Y.

AU - Zous, N. K.

AU - Huang, Trista

AU - Tsai, W. J.

AU - Kuo, Albert

AU - Wang, Ta-Hui

AU - Yin, Shaw

AU - Lu, Chih Yuan

PY - 2004/10

Y1 - 2004/10

N2 - A temperate accelerating model, which bases on the tunneling out of the thermally emitted electrons in the nitride layer via traps at the bottom oxide, is proposed to explain the retention loss behavior of high VT states at MXVAND products with respect to bake temperature, bake time, and cycling numbers. The model parameters can be easily extracted and the fitting results show an acceptable accuracy. According to this model, the retention loss should follow a straight line on a semi-log scale and the slope is proportional to the temperature. Besides, the cycling number dependence is successfully reproduced by considering the erase degradation and the growth rate of oxide traps.

AB - A temperate accelerating model, which bases on the tunneling out of the thermally emitted electrons in the nitride layer via traps at the bottom oxide, is proposed to explain the retention loss behavior of high VT states at MXVAND products with respect to bake temperature, bake time, and cycling numbers. The model parameters can be easily extracted and the fitting results show an acceptable accuracy. According to this model, the retention loss should follow a straight line on a semi-log scale and the slope is proportional to the temperature. Besides, the cycling number dependence is successfully reproduced by considering the erase degradation and the growth rate of oxide traps.

UR - http://www.scopus.com/inward/record.url?scp=21644461177&partnerID=8YFLogxK

U2 - 10.1109/IRWS.2004.1422728

DO - 10.1109/IRWS.2004.1422728

M3 - Paper

AN - SCOPUS:21644461177

SP - 11

EP - 14

T2 - 2004 IEEE International Integrated Reliability Workshop Final Report

Y2 - 18 October 2004 through 21 October 2004

ER -

A temperature accelerated model for high state retention loss of nitride storage flash memory

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