A temperature accelerated model for high state retention loss of nitride storage flash memory

M. Y. Lee*, N. K. Zous, Trista Huang, W. J. Tsai, Albert Kuo, Ta-Hui Wang, Shaw Yin, Chih Yuan Lu

*此作品的通信作者

    研究成果: Paper同行評審

    2 引文 斯高帕斯(Scopus)

    摘要

    A temperate accelerating model, which bases on the tunneling out of the thermally emitted electrons in the nitride layer via traps at the bottom oxide, is proposed to explain the retention loss behavior of high VT states at MXVAND products with respect to bake temperature, bake time, and cycling numbers. The model parameters can be easily extracted and the fitting results show an acceptable accuracy. According to this model, the retention loss should follow a straight line on a semi-log scale and the slope is proportional to the temperature. Besides, the cycling number dependence is successfully reproduced by considering the erase degradation and the growth rate of oxide traps.

    原文English
    頁面11-14
    頁數4
    DOIs
    出版狀態Published - 10月 2004
    事件2004 IEEE International Integrated Reliability Workshop Final Report - S. Lake Tahoe, CA, United States
    持續時間: 18 10月 200421 10月 2004

    Conference

    Conference2004 IEEE International Integrated Reliability Workshop Final Report
    國家/地區United States
    城市S. Lake Tahoe, CA
    期間18/10/0421/10/04

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