A Study on the Impact of Gamma Rays Irradiation on 4H-SiC CMOSFETs

Quan Han Chen; Bing Yue Tsui; Der Sheng Chao

doi:10.1109/WiPDAAsia58218.2023.10261927

A Study on the Impact of Gamma Rays Irradiation on 4H-SiC CMOSFETs

Quan Han Chen^*, Bing Yue Tsui, Der Sheng Chao

^*此作品的通信作者

電子研究所

研究成果: Conference contribution › 同行評審

1 引文斯高帕斯（Scopus）

摘要

In this paper, the effect of applying voltge during irradiation is discussed. Gamma ray results in a significant amount of positive charges residue in the oxide of MOS structure devices. PMOSFET has higher Δ V_th than NMOSFET because of interface state charges type. The difference can also be observed on the VTC of CMOS inverters.

原文	English
主出版物標題	WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9798350337112
DOIs	https://doi.org/10.1109/WiPDAAsia58218.2023.10261927
出版狀態	Published - 2023
事件	2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 - Hsinchu, 台灣持續時間: 27 8月 2023 → 29 8月 2023

出版系列

名字	WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference	2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
國家/地區	台灣
城市	Hsinchu
期間	27/08/23 → 29/08/23

存取文件

10.1109/WiPDAAsia58218.2023.10261927

其它文件與鏈接

Link to publication in Scopus

引用此

Chen, Q. H., Tsui, B. Y., & Chao, D. S. (2023). A Study on the Impact of Gamma Rays Irradiation on 4H-SiC CMOSFETs. 於 WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia58218.2023.10261927

@inproceedings{5e10087f0c314ab6b883ee4a20042a2b,

title = "A Study on the Impact of Gamma Rays Irradiation on 4H-SiC CMOSFETs",

abstract = "In this paper, the effect of applying voltge during irradiation is discussed. Gamma ray results in a significant amount of positive charges residue in the oxide of MOS structure devices. PMOSFET has higher Δ Vth than NMOSFET because of interface state charges type. The difference can also be observed on the VTC of CMOS inverters.",

keywords = "4H-SiC, CMOS, Cobalt-60, gamma ray, inverter, oxide, TID, VTC",

author = "Chen, {Quan Han} and Tsui, {Bing Yue} and Chao, {Der Sheng}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 ; Conference date: 27-08-2023 Through 29-08-2023",

year = "2023",

doi = "10.1109/WiPDAAsia58218.2023.10261927",

language = "English",

series = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",

address = "美國",

}

Chen, QH, Tsui, BY & Chao, DS 2023, A Study on the Impact of Gamma Rays Irradiation on 4H-SiC CMOSFETs. 於 WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023, Hsinchu, 台灣, 27/08/23. https://doi.org/10.1109/WiPDAAsia58218.2023.10261927

A Study on the Impact of Gamma Rays Irradiation on 4H-SiC CMOSFETs. / Chen, Quan Han; Tsui, Bing Yue; Chao, Der Sheng.
WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 2023. (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - A Study on the Impact of Gamma Rays Irradiation on 4H-SiC CMOSFETs

AU - Chen, Quan Han

AU - Tsui, Bing Yue

AU - Chao, Der Sheng

PY - 2023

Y1 - 2023

N2 - In this paper, the effect of applying voltge during irradiation is discussed. Gamma ray results in a significant amount of positive charges residue in the oxide of MOS structure devices. PMOSFET has higher Δ Vth than NMOSFET because of interface state charges type. The difference can also be observed on the VTC of CMOS inverters.

AB - In this paper, the effect of applying voltge during irradiation is discussed. Gamma ray results in a significant amount of positive charges residue in the oxide of MOS structure devices. PMOSFET has higher Δ Vth than NMOSFET because of interface state charges type. The difference can also be observed on the VTC of CMOS inverters.

KW - 4H-SiC

KW - CMOS

KW - Cobalt-60

KW - gamma ray

KW - inverter

KW - oxide

KW - TID

KW - VTC

UR - http://www.scopus.com/inward/record.url?scp=85174316989&partnerID=8YFLogxK

U2 - 10.1109/WiPDAAsia58218.2023.10261927

DO - 10.1109/WiPDAAsia58218.2023.10261927

M3 - Conference contribution

AN - SCOPUS:85174316989

T3 - WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

BT - WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023

Y2 - 27 August 2023 through 29 August 2023

ER -

Chen QH, Tsui BY, Chao DS. A Study on the Impact of Gamma Rays Irradiation on 4H-SiC CMOSFETs. 於 WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc. 2023. (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). doi: 10.1109/WiPDAAsia58218.2023.10261927

A Study on the Impact of Gamma Rays Irradiation on 4H-SiC CMOSFETs

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