A Study on the Impact of Gamma Rays Irradiation on 4H-SiC CMOSFETs

Quan Han Chen*, Bing Yue Tsui, Der Sheng Chao

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this paper, the effect of applying voltge during irradiation is discussed. Gamma ray results in a significant amount of positive charges residue in the oxide of MOS structure devices. PMOSFET has higher Δ Vth than NMOSFET because of interface state charges type. The difference can also be observed on the VTC of CMOS inverters.

原文English
主出版物標題WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350337112
DOIs
出版狀態Published - 2023
事件2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 - Hsinchu, Taiwan
持續時間: 27 8月 202329 8月 2023

出版系列

名字WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
國家/地區Taiwan
城市Hsinchu
期間27/08/2329/08/23

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