A study on the erase and retention mechanisms for MONOS, MANOS, and BE-SONOS non-volatile memory devices

Sheng Chih Lai*, Hang Ting Lue, Jung Yu Hsieh, Ming Jui Yang, Yan Kai Chiou, Chia Wei Wu, Tai Bor Wu, Guang Li Luo, Chao-Hsin Chien, Erh Kun Lai, Kuang Yeu Hsieh, Rich Liu, Chih Yuan Lu

*此作品的通信作者

    研究成果: Conference contribution同行評審

    9 引文 斯高帕斯(Scopus)

    摘要

    The erase and retention characteristics of MONOS, MANOS [1] and BE-SONOS [2] devices are examined in detail in order to determine their mechanisms. The erase transient current (J) is extracted and plotted against the tunnel oxide electric field (E TUN ). Our results show that the erase speed ranking is BE-SONOS > MANOS > MONOS. The difference in erase speed comes from the different erase mechanisms of these devices. The retention characteristics are also compared and discussed.

    原文English
    主出版物標題2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers
    DOIs
    出版狀態Published - 26 9月 2007
    事件2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan
    持續時間: 23 4月 200725 4月 2007

    出版系列

    名字International Symposium on VLSI Technology, Systems, and Applications, Proceedings

    Conference

    Conference2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
    國家/地區Taiwan
    城市Hsinchu
    期間23/04/0725/04/07

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