A study on the erase and retention mechanisms for MONOS, MANOS, and BE-SONOS non-volatile memory devices

Sheng Chih Lai; Hang Ting Lue; Jung Yu Hsieh; Ming Jui Yang; Yan Kai Chiou; Chia Wei Wu; Tai Bor Wu; Guang Li Luo; Chao-Hsin Chien; Erh Kun Lai; Kuang Yeu Hsieh; Rich Liu; Chih Yuan Lu

doi:10.1109/VTSA.2007.378898

A study on the erase and retention mechanisms for MONOS, MANOS, and BE-SONOS non-volatile memory devices

Sheng Chih Lai^*, Hang Ting Lue, Jung Yu Hsieh, Ming Jui Yang, Yan Kai Chiou, Chia Wei Wu, Tai Bor Wu, Guang Li Luo, Chao-Hsin Chien, Erh Kun Lai, Kuang Yeu Hsieh, Rich Liu, Chih Yuan Lu

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

9 引文斯高帕斯（Scopus）

摘要

The erase and retention characteristics of MONOS, MANOS [1] and BE-SONOS [2] devices are examined in detail in order to determine their mechanisms. The erase transient current (J) is extracted and plotted against the tunnel oxide electric field (E_TUN). Our results show that the erase speed ranking is BE-SONOS > MANOS > MONOS. The difference in erase speed comes from the different erase mechanisms of these devices. The retention characteristics are also compared and discussed.

原文	English
主出版物標題	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers
DOIs	https://doi.org/10.1109/VTSA.2007.378898
出版狀態	Published - 2007
事件	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, 台灣持續時間: 23 4月 2007 → 25 4月 2007

出版系列

名字	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
國家/地區	台灣
城市	Hsinchu
期間	23/04/07 → 25/04/07

存取文件

10.1109/VTSA.2007.378898

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Link to publication in Scopus

引用此

Lai, S. C., Lue, H. T., Hsieh, J. Y., Yang, M. J., Chiou, Y. K., Wu, C. W., Wu, T. B., Luo, G. L., Chien, C.-H., Lai, E. K., Hsieh, K. Y., Liu, R., & Lu, C. Y. (2007). A study on the erase and retention mechanisms for MONOS, MANOS, and BE-SONOS non-volatile memory devices. 於 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers 文章 4239466 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2007.378898

Lai, Sheng Chih ; Lue, Hang Ting ; Hsieh, Jung Yu 等. / A study on the erase and retention mechanisms for MONOS, MANOS, and BE-SONOS non-volatile memory devices. 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{3474d18ef9044baa85b9f7cdc6938fe3,

title = "A study on the erase and retention mechanisms for MONOS, MANOS, and BE-SONOS non-volatile memory devices",

abstract = "The erase and retention characteristics of MONOS, MANOS [1] and BE-SONOS [2] devices are examined in detail in order to determine their mechanisms. The erase transient current (J) is extracted and plotted against the tunnel oxide electric field (ETUN). Our results show that the erase speed ranking is BE-SONOS > MANOS > MONOS. The difference in erase speed comes from the different erase mechanisms of these devices. The retention characteristics are also compared and discussed.",

author = "Lai, {Sheng Chih} and Lue, {Hang Ting} and Hsieh, {Jung Yu} and Yang, {Ming Jui} and Chiou, {Yan Kai} and Wu, {Chia Wei} and Wu, {Tai Bor} and Luo, {Guang Li} and Chao-Hsin Chien and Lai, {Erh Kun} and Hsieh, {Kuang Yeu} and Rich Liu and Lu, {Chih Yuan}",

year = "2007",

doi = "10.1109/VTSA.2007.378898",

language = "English",

isbn = "1424405858",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

booktitle = "2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers",

note = "2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA ; Conference date: 23-04-2007 Through 25-04-2007",

}

Lai, SC, Lue, HT, Hsieh, JY, Yang, MJ, Chiou, YK, Wu, CW, Wu, TB, Luo, GL, Chien, C-H, Lai, EK, Hsieh, KY, Liu, R & Lu, CY 2007, A study on the erase and retention mechanisms for MONOS, MANOS, and BE-SONOS non-volatile memory devices. 於 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers., 4239466, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, 台灣, 23/04/07. https://doi.org/10.1109/VTSA.2007.378898

A study on the erase and retention mechanisms for MONOS, MANOS, and BE-SONOS non-volatile memory devices. / Lai, Sheng Chih; Lue, Hang Ting; Hsieh, Jung Yu 等.
2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. 4239466 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - A study on the erase and retention mechanisms for MONOS, MANOS, and BE-SONOS non-volatile memory devices

AU - Lai, Sheng Chih

AU - Lue, Hang Ting

AU - Hsieh, Jung Yu

AU - Yang, Ming Jui

AU - Chiou, Yan Kai

AU - Wu, Chia Wei

AU - Wu, Tai Bor

AU - Luo, Guang Li

AU - Chien, Chao-Hsin

AU - Lai, Erh Kun

AU - Hsieh, Kuang Yeu

AU - Liu, Rich

AU - Lu, Chih Yuan

PY - 2007

Y1 - 2007

N2 - The erase and retention characteristics of MONOS, MANOS [1] and BE-SONOS [2] devices are examined in detail in order to determine their mechanisms. The erase transient current (J) is extracted and plotted against the tunnel oxide electric field (ETUN). Our results show that the erase speed ranking is BE-SONOS > MANOS > MONOS. The difference in erase speed comes from the different erase mechanisms of these devices. The retention characteristics are also compared and discussed.

AB - The erase and retention characteristics of MONOS, MANOS [1] and BE-SONOS [2] devices are examined in detail in order to determine their mechanisms. The erase transient current (J) is extracted and plotted against the tunnel oxide electric field (ETUN). Our results show that the erase speed ranking is BE-SONOS > MANOS > MONOS. The difference in erase speed comes from the different erase mechanisms of these devices. The retention characteristics are also compared and discussed.

UR - http://www.scopus.com/inward/record.url?scp=34548848525&partnerID=8YFLogxK

U2 - 10.1109/VTSA.2007.378898

DO - 10.1109/VTSA.2007.378898

M3 - Conference contribution

AN - SCOPUS:34548848525

SN - 1424405858

SN - 9781424405855

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

BT - 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers

T2 - 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

Y2 - 23 April 2007 through 25 April 2007

ER -

Lai SC, Lue HT, Hsieh JY, Yang MJ, Chiou YK, Wu CW 等. A study on the erase and retention mechanisms for MONOS, MANOS, and BE-SONOS non-volatile memory devices. 於 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. 4239466. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2007.378898

A study on the erase and retention mechanisms for MONOS, MANOS, and BE-SONOS non-volatile memory devices

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Conference

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