@inproceedings{7c57b49e34a24c428483ab1b546b1902,
title = "A study of mechanical lift-off technology for high-efficiency vertical LEDs using Micro-Porous GaN template",
abstract = "The high efficiency vertical light emitting diodes (V-LEDs) using mechanical lift-off with Micro-Porous GaN template formed by high temperature molten KOH wet etching process were demonstrated. The average threading dislocation density (TDD) of u-GaN after regrowth was estimated by transmission electron microscopy (TEM) reduced from 2×109 to 1×10 8 cm-2. The sapphire substrate was easily removed by mechanical lift-off during wafer bonding process. The light output of V-LEDs are greatly enhanced by 100% compared with Conventional-LEDs at an operating current of 20mA due to the high quality thin GaN and excellent heating dissipation.",
author = "Lee, {Chia Yu} and Lin, {Da Wei} and Liu, {Che Yu} and Hsu, {Shih Chieh} and Hao-Chung Kuo and Wang, {Shing Chung} and Chang, {Chun Yen}",
year = "2013",
doi = "10.1364/CLEO_AT.2013.ATh3N.2",
language = "English",
isbn = "9781557529725",
series = "2013 Conference on Lasers and Electro-Optics, CLEO 2013",
publisher = "IEEE Computer Society",
booktitle = "2013 Conference on Lasers and Electro-Optics, CLEO 2013",
address = "美國",
note = "2013 Conference on Lasers and Electro-Optics, CLEO 2013 ; Conference date: 09-06-2013 Through 14-06-2013",
}