摘要
- The generation of interface traps by different stresses to 4-nni thick SiU2 gate oxide is studied. Four different kinds of constant current stresses were applied. The interface- trap density (At) generation due to hot holes under VG < 0 Fowler-Nordheim (FN) stress was characterized using quantum- yield measurement and substrate-hot-hole (SHH) stress. The interface-trap density (.Dit) generated by SHH stress increases as gate-oxide field increases. Substrate-hot-electron (SHE) stress generates much less interface-trap density (.Dit) than SHH stress. It is also observed that N2U-grown gate-oxide has smaller hole- injection probability but larger electron-injection probability than Ü2-grown oxide. N2U-grown gate oxide is shown to have less SHH stress-induced interface traps than Ü2-grown oxide in p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) devices.
原文 | English |
---|---|
頁(從 - 到) | 1705-1710 |
頁數 | 6 |
期刊 | IEEE Transactions on Electron Devices |
卷 | 46 |
發行號 | 8 |
DOIs | |
出版狀態 | Published - 1999 |