A stress analysis of transferred thin-GaN light-emitting diodes fabricated by Au-Si wafer bonding

Keyphrases

• AuSi 100%
• Biaxial 100%
• Bonding Condition 50%
• Bonding Layer 100%
• Bonding Lift-off 50%
• Bonding Temperature 50%
• Compressive Stress 100%
• Fabrication Methods 50%
• Film Thickness 50%
• GaN Films 100%
• GaN Thin Film 50%
• GaN-based Light-emitting Diodes 100%
• In-plane Stress 50%
• Laser Lift-off 50%
• Layer Thickness 100%
• Relaxation Process 50%
• Residual Compressive Stress 50%
• Si Substrate 50%
• Si Wafer 100%
• Stress Analysis 100%
• Stress Variation 50%
• Thermal Strain 50%
• Wafer Bonding 100%

Engineering

• Bonding Layer 100%
• Bonding Temperature 50%
• Compressive Residual Stress 50%
• Compressive Stress 100%
• Layer Thickness 100%
• Light-Emitting Diode 100%
• Plane Stress 50%
• Relaxation Process 50%
• Si Substrate 50%
• Si Wafer 100%
• Thermal Strain 50%
• Thin Films 50%
• Wafer Bonding 100%

Material Science

• Film 100%
• Film Thickness 50%
• Light-Emitting Diode 100%
• Stress Analysis 100%
• Thin Films 50%