摘要
A new erasable programmable read-only memory (EPROM) device with promise for low-voltage high-speed programming is described. This device is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control channel region introduced close to the source, At high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region also aids the injection of hot electrons into the floating gate. As a result, the source-side injection EPROM (SI-EPROM) has shown 103s programming speed at a drain voltage of 5 V.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 540-542 |
| 頁數 | 3 |
| 期刊 | IEEE Electron Device Letters |
| 卷 | 7 |
| 發行號 | 9 |
| DOIs | |
| 出版狀態 | Published - 1 1月 1986 |
