A source-side injection erasable programmable read-only-memory (SI-EPROM) device

A. T. Wu, T. Y. Chan, P. K. Ko, Chen-Ming Hu

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

A new erasable programmable read-only memory (EPROM) device with promise for low-voltage high-speed programming is described. This device is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control channel region introduced close to the source, At high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region also aids the injection of hot electrons into the floating gate. As a result, the source-side injection EPROM (SI-EPROM) has shown 103s programming speed at a drain voltage of 5 V.

原文English
頁(從 - 到)540-542
頁數3
期刊IEEE Electron Device Letters
7
發行號9
DOIs
出版狀態Published - 1 1月 1986

指紋

深入研究「A source-side injection erasable programmable read-only-memory (SI-EPROM) device」主題。共同形成了獨特的指紋。

引用此