A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio

Xiang Fang; Chia Ho Lin; Yung Tai Sun; Huei Tzu Chin; Hsiao-Wen Zan; Hsin-Fei Meng; Sheng Fu Horng; Lon A. Wang

doi:10.1016/j.orgel.2016.01.027

A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio

Xiang Fang
, Chia Ho Lin
, Yung Tai Sun
, Huei Tzu Chin
, Hsiao-Wen Zan^*
, Hsin-Fei Meng
, Sheng Fu Horng
, Lon A. Wang

^*此作品的通信作者

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 × 10^-5 mA/cm² and high ON/OFF current ratio as high as 10⁵.

原文	English
頁（從 - 到）	227-233
頁數	7
期刊	Organic Electronics
卷	31
DOIs	https://doi.org/10.1016/j.orgel.2016.01.027
出版狀態	Published - 1 4月 2016

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10.1016/j.orgel.2016.01.027

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@article{4b556175d1534eb89ebd241861213768,

title = "A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio",

abstract = "A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 × 10-5 mA/cm2 and high ON/OFF current ratio as high as 105.",

keywords = "Lift-off, Nanoimprint lithography, Organic transistor, P3HT, Vertical",

author = "Xiang Fang and Lin, \{Chia Ho\} and Sun, \{Yung Tai\} and Chin, \{Huei Tzu\} and Hsiao-Wen Zan and Hsin-Fei Meng and Horng, \{Sheng Fu\} and Wang, \{Lon A.\}",

year = "2016",

month = apr,

day = "1",

doi = "10.1016/j.orgel.2016.01.027",

language = "English",

volume = "31",

pages = "227--233",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio

AU - Fang, Xiang

AU - Lin, Chia Ho

AU - Sun, Yung Tai

AU - Chin, Huei Tzu

AU - Zan, Hsiao-Wen

AU - Meng, Hsin-Fei

AU - Horng, Sheng Fu

AU - Wang, Lon A.

PY - 2016/4/1

Y1 - 2016/4/1

N2 - A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 × 10-5 mA/cm2 and high ON/OFF current ratio as high as 105.

AB - A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 × 10-5 mA/cm2 and high ON/OFF current ratio as high as 105.

KW - Lift-off

KW - Nanoimprint lithography

KW - Organic transistor

KW - P3HT

KW - Vertical

UR - https://www.scopus.com/pages/publications/84957574092

U2 - 10.1016/j.orgel.2016.01.027

DO - 10.1016/j.orgel.2016.01.027

M3 - Article

AN - SCOPUS:84957574092

SN - 1566-1199

VL - 31

SP - 227

EP - 233

JO - Organic Electronics

JF - Organic Electronics

ER -

A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio

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