@article{4b556175d1534eb89ebd241861213768,
title = "A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio",
abstract = "A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 × 10-5 mA/cm2 and high ON/OFF current ratio as high as 105.",
keywords = "Lift-off, Nanoimprint lithography, Organic transistor, P3HT, Vertical",
author = "Xiang Fang and Lin, {Chia Ho} and Sun, {Yung Tai} and Chin, {Huei Tzu} and Hsiao-Wen Zan and Hsin-Fei Meng and Horng, {Sheng Fu} and Wang, {Lon A.}",
year = "2016",
month = apr,
day = "1",
doi = "10.1016/j.orgel.2016.01.027",
language = "English",
volume = "31",
pages = "227--233",
journal = "Organic Electronics",
issn = "1566-1199",
publisher = "Elsevier B.V.",
}