TY - GEN
T1 - A single-inductor multiple-output boost converter with freewheel charge-pump control
AU - Chen, Chia Min
AU - Liao, Te Wen
AU - Hsu, Kai Hsiu
AU - Hung, Chung-Chih
PY - 2012
Y1 - 2012
N2 - This paper presents a freewheel-charge-pump-controlled design for a single-inductor multiple-output (SIMO) DC-DC Converter. By applying the freewheel-charge-pump-controlled (FCPC) technique, the freewheel switching time is reused, and two extra charge-pump outputs are provided by time recycling, with no cost in time sequences. The converter has two step-up outputs and two charge-pump outputs that can be higher or lower than the input supply. The proposed converter shows low cross-regulation and achieves a maximum loading current of 70 mA. Fabricated in a 0.18-μm CMOS process, the proposed circuit occupies only 1.3×1.3 mm2. Experimental results demonstrate that the converter successfully generates four wellregulated outputs with a single inductor. The supply voltage ranged from 1.6 V to 2.5 V and the load regulation performance was 0.08 mV/mA, 0.05mV/mA, 1.7 mV/mA, and 1.9 mV/mA for VO1, VO2, VO3 and VO4, respectively.
AB - This paper presents a freewheel-charge-pump-controlled design for a single-inductor multiple-output (SIMO) DC-DC Converter. By applying the freewheel-charge-pump-controlled (FCPC) technique, the freewheel switching time is reused, and two extra charge-pump outputs are provided by time recycling, with no cost in time sequences. The converter has two step-up outputs and two charge-pump outputs that can be higher or lower than the input supply. The proposed converter shows low cross-regulation and achieves a maximum loading current of 70 mA. Fabricated in a 0.18-μm CMOS process, the proposed circuit occupies only 1.3×1.3 mm2. Experimental results demonstrate that the converter successfully generates four wellregulated outputs with a single inductor. The supply voltage ranged from 1.6 V to 2.5 V and the load regulation performance was 0.08 mV/mA, 0.05mV/mA, 1.7 mV/mA, and 1.9 mV/mA for VO1, VO2, VO3 and VO4, respectively.
UR - http://www.scopus.com/inward/record.url?scp=84870804991&partnerID=8YFLogxK
U2 - 10.1109/ESSCIRC.2012.6341283
DO - 10.1109/ESSCIRC.2012.6341283
M3 - Conference contribution
AN - SCOPUS:84870804991
SN - 9781467322126
T3 - European Solid-State Circuits Conference
SP - 157
EP - 160
BT - 2012 Proceedings of the European Solid State Circuits Conference, ESSCIRC 2012
T2 - 38th European Solid State Circuits Conference, ESSCIRC 2012
Y2 - 17 September 2012 through 21 September 2012
ER -