A Simplified Model of Short-Channel MOSFET Characteristics in the Breakdown Mode

Fu Chieh Hsu*, S. Muller Richard, Chen-Ming Hu

*此作品的通信作者

研究成果: Article同行評審

31 引文 斯高帕斯(Scopus)

摘要

When a short-channel MOSFET is driven into the avalancheinduced breakdown region, the drain current increases rapidly and usually shows a snapback characteristic. Both the substrate current and the current collected by a nearby reverse biased p-n junction also increases with increasing drain current in this region of operation. AU of these effects are associated with minority-carrier injection from the source junction into the substrate. A model for the drain I-V characteristics is proposed. Aiso presented is a related model incorporating conductivity modulation that predicts !inear relationships between the substrate and the collection currents and the drain current in this region of operation. Experimental results agree weil with the models.

原文English
頁(從 - 到)571-576
頁數6
期刊IEEE Transactions on Electron Devices
30
發行號6
DOIs
出版狀態Published - 1 1月 1983

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