A Simple Method to Characterize Substrate Current in MOSFET's

T. Y. Chan; P. K. Ko; Chen-Ming Hu

doi:10.1109/EDL.1984.26006

A Simple Method to Characterize Substrate Current in MOSFET's

T. Y. Chan, P. K. Ko, Chen-Ming Hu

國際半導體產業學院

研究成果: Article › 同行評審

167 引文斯高帕斯（Scopus）

摘要

Experimental verification of substrate current characteristics is thoroughly carried out. V_DS — V_DSAT, instead of V_DS, is shown to be the driving force of all hot-electron effects. A simple relationship between substrate current and V_DS — V_DSAT is found. This relationship provides a convenient tool to characterize the substrate current or the channel electric field, and, hence, all hot-electron effects. Measurements of I_SUB/I_D and V_DS — V_DSAT at two bias points and any one channel length are sufficient to fully characterize the substrate currents for all channel lengths V_DS's and V_G's for a given technology.

原文	English
頁（從 - 到）	505-507
頁數	3
期刊	Ieee Electron Device Letters
卷	5
發行號	12
DOIs	https://doi.org/10.1109/EDL.1984.26006
出版狀態	Published - 12月 1984

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@article{13dbae67366d40fda41f80f49a28c041,

title = "A Simple Method to Characterize Substrate Current in MOSFET's",

abstract = "Experimental verification of substrate current characteristics is thoroughly carried out. VDS — VDSAT, instead of VDS, is shown to be the driving force of all hot-electron effects. A simple relationship between substrate current and VDS — VDSAT is found. This relationship provides a convenient tool to characterize the substrate current or the channel electric field, and, hence, all hot-electron effects. Measurements of ISUB/ID and VDS — VDSAT at two bias points and any one channel length are sufficient to fully characterize the substrate currents for all channel lengths VDS's and VG's for a given technology.",

author = "Chan, {T. Y.} and Ko, {P. K.} and Chen-Ming Hu",

year = "1984",

month = dec,

doi = "10.1109/EDL.1984.26006",

language = "English",

volume = "5",

pages = "505--507",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - A Simple Method to Characterize Substrate Current in MOSFET's

AU - Chan, T. Y.

AU - Ko, P. K.

AU - Hu, Chen-Ming

PY - 1984/12

Y1 - 1984/12

N2 - Experimental verification of substrate current characteristics is thoroughly carried out. VDS — VDSAT, instead of VDS, is shown to be the driving force of all hot-electron effects. A simple relationship between substrate current and VDS — VDSAT is found. This relationship provides a convenient tool to characterize the substrate current or the channel electric field, and, hence, all hot-electron effects. Measurements of ISUB/ID and VDS — VDSAT at two bias points and any one channel length are sufficient to fully characterize the substrate currents for all channel lengths VDS's and VG's for a given technology.

AB - Experimental verification of substrate current characteristics is thoroughly carried out. VDS — VDSAT, instead of VDS, is shown to be the driving force of all hot-electron effects. A simple relationship between substrate current and VDS — VDSAT is found. This relationship provides a convenient tool to characterize the substrate current or the channel electric field, and, hence, all hot-electron effects. Measurements of ISUB/ID and VDS — VDSAT at two bias points and any one channel length are sufficient to fully characterize the substrate currents for all channel lengths VDS's and VG's for a given technology.

UR - http://www.scopus.com/inward/record.url?scp=0021601456&partnerID=8YFLogxK

U2 - 10.1109/EDL.1984.26006

DO - 10.1109/EDL.1984.26006

M3 - Article

AN - SCOPUS:0021601456

SN - 0741-3106

VL - 5

SP - 505

EP - 507

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 12

ER -

A Simple Method to Characterize Substrate Current in MOSFET's

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