We have developed a simple method adopting double-patterning technique to extend the I-line stepper limit for the sub-100 nm poly-Si pattern generation in this work. Through in-line and cross-sectional scanned electron microscopic analyses of the generated patterns, we confirmed the feasibility of the double-patterning technique for the fabrication of nano-scale devices. Resolution capability of this technique has been confirmed to be at least 100 nm, which is much superior to the resolution limit of conventional I-line lithography. This approach has also been applied for fabricating p-channel metal-oxide-semiconductor field-effect transistors. Excellent device characteristics were verified.
|頁（從 - 到）||584-588|
|出版狀態||Published - 1 5月 2010|